Details, datasheet, quote on part number: HYM72V16M636LT6
PartHYM72V16M636LT6
CategoryMemory => DRAM => SDR SDRAM => Modules => 256 MB
Description32Mx64bits PC133 Sdram Unbuffered Dimm Based on 32Mx8 Sdram With Lvttl, 4 Banks & 8K Refresh
CompanyHynix Semiconductor
DatasheetDownload HYM72V16M636LT6 datasheet
  

 

Features, Applications
based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh
DESCRIPTION

The Hyundai HYM72V32636T8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits CMOS Synchronous DRAMs 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package a 168pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB. The Hyundai HYM72V32636T8 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 256Mbytes memory. The Hyundai HYM72V32636T8 Series are fully synchronous operation referenced to the positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth.

FEATURES

PC133/PC100MHz support 168pin SDRAM Unbuffered DIMM Serial Presence Detect with EEPROM 1.25" (31.75mm) Height PCB with single sided components Single 3.3 0.3V power supply 8 or Full page for Sequential Burst All device pins are compatible with LVTTL interface or 8 for Interleave Burst Data mask function by DQM Programmable CAS Latency 2, 3 Clocks SDRAM internal banks : four banks Module bank : one physical bank Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Feb.01

PIN ~ A12 /RAS, /CAS, /WE ~ DQ63 VCC VSS SCL SDA WP NC PIN NAME Clock Inputs Clock Enable Chip Select SDRAM Bank Address Row Address Strobe, Column Address Strobe, Write Enable Data Input/Output Mask Data Input/Output Power Supply (3.3V) Ground SPD Clock Input SPD Data Input/Output SPD Address Input Write Protect for SPD No Connection DESCRIPTION The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh Enables or disables all inputs except CK, CKE and DQM Selects bank to be activated during /RAS activity Selects bank to be read/written during /CAS activity Row Address ~ RA12, Column Address ~ CA9 Auto-precharge flag : A10 /RAS, /CAS and /WE define the operation Refer function truth table for details Controls output buffers in read mode and masks input data in write mode Multiplexed data input / output pin Power supply for internal circuits and input buffers Ground Serial Presence Detect Clock input Serial Presence Detect Data input/output Serial Presence Detect Address Input Write Protect for Serial Presence Detect on DIMM No connection

Note * CK1 and CK3 are connected with termination R/C (Rsfer to the block diagram)

 

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