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Details, datasheet, quote on part number:IC62VV1008L-100BI
 
 
Part:IC62VV1008L-100BI
Category:Memory => SRAM => Async. SRAM
Description:100ns; 1.8V; 1M X 8 Ultra Low Power CMOS Static RAM
Company:Integrated Circuit Solution
Datasheet:Download IC62VV1008L-100BI datasheet   File size : 218 kB
Request For quote:  Find where to buy IC62VV1008L-100BI
 



Datasheet text preview:
IC62VV1008L IC62VV1008LL
Document Title
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
Revision History
Revision No
0A
History
Initial Draft
Draft Date
September 4,2002
Remark
Preliminary
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
1
IC62VV1008L IC62VV1008LL
1M x 8 1.8V ULTRA LOW POWER CMOS STATIC RAM
FEATURES
· Access times of 70, 100 ns · CMOS Low power operation: ICC=10mA (typical)* operation ISB2=3µA (typical)* standby · Low data retention voltage: 1.2V (min.) · Output Enable (OE) and Two Chip Enables (CE1, CE2) inputs for ease in applications · TTL compatible inputs and outputs · Fully static operation: -- No clock or refresh reguired · Single 1.65V-2.2V power supply · Wafer level burn in test mode · Available in the know good die form and 48-pin 8*10mm TF-BGA
* Typical values are measured at VCC=1.8V, TA=25°C
Preliminary
DESCRIPTION The ICSI IC62VV1008L and IC62VV1008LL is a low voltage,
1,048,576 words by 8 bits, CMOS SRAM. It is fabricated using ICSI's low voltage, six transistor (6T), CMOS technology. The device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Additionally, easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable ( WE) controls both writing and reading of the memory. The IC62VV1008L and IC62VV1008LL are available in know good die form and 48-pin 8*10mm TF-BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1024K x 8 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1 CE2 OE WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
CONTROL CIRCUIT
2
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
IC62VV1008L IC62VV1008LL
P I N CONFIGURATIONS
48-Pin 8*10mm TF-BGA (TOP View)
1 A B C D E F G H
NC NC I/O0 GND Vcc I/O3 NC A18
2
OE NC NC I/O1 I/O2 NC NC A8
3
A0 A3 A5 A17 Vcc A14 A12 A9
4
A1 A4 A6 A7 A16 A15 A13 A10
5
A2 CE1 NC I/O5 I/O6 NC WE A11
6
CE2 NC I/O4 Vcc GND I/O7 NC A19
PIN DESCRIPTIONS
A0-A19 CE1 CE2 OE WE I/O0-I/O7 NC Vcc GND Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Data Input/Output No Connection Power Ground
T R U T H TABLE
Mode Not Selected (POWER-DOWN) Output Disabled Read Write WE X X H H L CE1 H X L L L CE2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN Vcc Current ISB2 ISB2 ICC ICC ICC
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to +70°C ­40°C to +85°C VCC 1.65V - 2.2V 1.65V - 2.2V
Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
3