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Part: IS61LV12824-10B
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 10ns; 3.3V; 128K X 24 High-speed CMOS CMOS Static RAM
Company: Integrated Circuit Solution
Datasheet: Download IS61LV12824-10B datasheet File size : 228 kB
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Datasheet text preview:
IS61LV12824
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
· High-speed access time: 8, 9, 10, 12 ns · CMOS low power operation -- 720 mW (typical) operating @ 9 ns -- 36 mW (typical) standby @ 9 ns · TTL compatible interface levels · Single 3.3V power supply · Fully static operation: no clock or refresh required · Three state outputs · Available in 119-pin 14x22mm PBGA
DESCRIPTION The ICSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ICSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE1, CE2 are HIGH and CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE1, CE2, CE2 and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. T h e IS61LV12824 is packaged in the JEDEC standard 119-pin 14*22mm PBGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 24 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O23
COLUMN I/O
CE2 CE1 CE2 OE WE
CONTROL CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SR021-0B
1
IS61LV12824
PIN CONFIGURATION 119-pin 14x22mm PBGA
1 A B C D E F G H J K L M N P R T U NC NC I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 VCCQ I/O22 I/O23 I/O12 I/O13 I/O14 I/O15 NC NC 2 A11 A12 NC VCCQ GND VCCQ GND VCCQ GND VCCQ GND VCCQ GND VCCQ NC A10 A9 3 A14 A13 CE2 GND VCC GND VCC GND VCC GND VCC GND VCC GND NC A8 A7 4 A15 CE1 NC GND GND GND GND GND GND GND GND GND GND GND NC WE OE 5 A16 A5 CE2 GND VCC GND VCC GND VCC GND VCC GND VCC GND NC A0 A6 6 A4 A3 NC VCCQ GND VCCQ GND VCCQ GND VCCQ GND VCCQ GND VCCQ NC A1 A2 7 NC NC I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 VCCQ I/O6 I/O7 I/O8 I/O9 I/O10 I/O11 NC NC
PIN DESCRIPTIONS
A0-A16 Address Inputs I/O0-I/O23 Data Inputs/Outputs CE1, CE2 Chip Enable Input LOW CE2 OE WE NC Vcc VCCQ GND Chip Enable Input HIGH Output Enable Input Write Enable Input No Connection Power I/O Power Ground
2
Integrated Circuit Solution Inc.
SR021-0B
IS61LV12824
TRUTH TABLE
Mode Not Selected Output Disabled Read Write WE X H X H H L L CE1 H L L L L L L CE2 X H H H H H H CE2 X L L L L L L OE X H X L H X H I/O0-I/O23 High-Z High-Z High-Z DOUT High-Z DIN HIHG-Z Vcc Current ISB1, ISB2 ICC 1CC ICC
1 2 3
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VCC VTERM T STG T BIAS PT IOUT Parameter Power Supply Voltage Relative to GND Terminal Voltage with Respect to GND Storage Temperature Temperature Under Bias: Com. Ind. Power Dissipation DC Output Current Value 0.5 to 5.0 0.5 to Vcc + 0.5 65 to + 150 10 to + 85 45 to + 90 2.0 ±20 Unit V V °C °C °C W mA
4 5 6 7 8 9
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C VC C (8, 9, 10 ns) 3.3V + 10%, 5% 3.3V + 10%, 5% VC C (12 ns) 3.3V ± 10% 3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) GND VIN VCC GND VOUT VCC, Outputs Disabled Test Conditions VCC = Min., IOH = 4.0 mA VCC = Min., IOL = 8.0 mA Min. 2.4 -- 2.2 0.3 1 1 Max. -- 0.4 VCC + 0.3 0.8 1 1 Unit V V V V µA µA
10 11 12
Input Leakage Output Leakage
Note: 1. VIL (min.) = 0.3V DC; VIL (min.) = 2.0V AC (pulse width 2.0 ns). VIH (max.) = VCC + 0.3V DC; VIH (max.) = VCC + 2.0V AC (pulse width 2.0 ns).
Integrated Circuit Solution Inc.
SR021-0B
3
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