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Part: IS61LV6416-10TI
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 10ns; 3.3V; 64K X 16 High-speed CMOS Static RAM
Company: Integrated Circuit Solution
Datasheet: Download IS61LV6416-10TI datasheet File size : 145 kB
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Datasheet text preview:
IS61LV6416
FEATURES
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation 250 mW (typical) operating 250 µW (typical) standby TTL compatible interface levels Single 3.3V power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available
DESCRIPTION The 1+51 IS61LV6416 is a high-speed, 1,048,576-bit static
RAM organized as 65,536 words by 16 bits. It is fabricated using 1+51's high-performance CMOS technology. This highly r e l i a b l e process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61LV6416 is packaged in the JEDEC standard 44-pin 400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TFBGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
64K x 16 MEMORY ARRAY
VCC GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
COLUMN I/O
CE OE WE UB LB CONTROL CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SR013-0C
1
IS61LV6416
PIN CONFIGURATIONS
44-Pin SOJ
A15 A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 Vcc GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND Vcc I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC
44-Pin TSOP-2
A15 A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 Vcc GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND Vcc I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC
48-Pin 6x8mm TF-BGA
1 A B C D E F G H
LB I/O0 I/O1 GND Vcc I/O5 I/O7 NC
PIN DESCRIPTIONS
5
A6 CE I/O13 I/O12 I/O11 I/O10 WE A15
2
OE UB I/O2 I/O3 I/O4 I/O6 NC A12
3
A3 A2 A0 NC NC A9 A11 A13
4
A7 A1 A4 A5 NC A8 A10 A14
6
N/C I/O15 I/O14 Vcc GND I/O9 I/O8 NC
A0-A15 I/O0-I/O15 CE OE WE LB UB NC Vcc GND
Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground
TRUTH TABLE
Mode Not Selected Output Disabled Read WE X H X H H H L L L CE H L L L L L L L L OE X H X L L L X X X LB X X H L H L L H L UB X X H H L L H L L I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN Vcc Current ISB, ISB ICC ICC
Write
ICC
2
Integrated Circuit Solution Inc.
SR013-0C
IS61LV6416
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current (LOW) Value 0.5 to Vcc+0.5 65 to +150 1.5 20 Unit V °C W mA
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may c a u s e permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C Vcc 3.3V ± 10% 3.3V ± 10%
! "
Min. 2.4 2 0.3 Max. 0.4 VCC + 0.3 0.8 2 5 2 5 Unit V V V V µA µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) GND VIN VCC GND VOUT VCC, Outputs Disabled Com. Ind. Com. Ind. Input Leakage Output Leakage Test Conditions VCC = Min., IOH = 4.0 mA VCC = Min., IOL = 8.0 mA
# $ % & '
2 -5 2 -5
Notes: 1. VIL (min.) = 2.0V for pulse width less than 10 ns. 2. The Vcc operating range for 8 ns is 3.3V +10%, -5%.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol ICC ISB Parameter Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., IOUT = 0 mA, f = fMAX VCC = Max., VIN = VIH or VIL CE VIH , f = 0 VCC = Max., CE VCC 0.2V, VIN VCC 0.2V, or VIN 0.2V, f = 0 Com. Ind. Com. Ind. Com. Ind. -8 ns Min. Max. 220 230 30 40 10 15 -10 ns Min. Max. 200 210 30 40 10 15 -12 ns Min. Max. 180 190 30 40 10 15 -15 ns Min. Max. 180 190 30 40 10 15 Unit mA mA
3
ISB
mA
Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Circuit Solution Inc.
SR013-0C
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