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Part: IS63LV1024-8K
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 8ns; 3.3V; 128K X 8 High-speed CMOS Static RAM
Company: Integrated Circuit Solution
Datasheet: Download IS63LV1024-8K datasheet File size : 160 kB
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Datasheet text preview:
IS63LV1024
FEATURES
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
High-speed access times: 8, 10, 12 and 15 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 3.3V power supply Packages available: 32-pin 300mil SOJ 32-pin 400mil SOJ 32-pin 400mil TSOP-2
DESCRIPTION The 1+51 IS63LV1024 is a very high-speed, low power,
131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024 is fabricated using 1+51's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels. The IS63LV1024 operates from a single 3.3V power supply and all inputs are TTL-compatible. The IS63LV1024 is available in 32-pin 300mil SOJ, 400mil SOJ, and 400mil TSOP-2 packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K X 8 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE OE WE CONTROL CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SR019-0C
1
IS63LV1024
PIN CONFIGURATION
32-Pin SOJ
A0 A1 A2 A3 CE I/O0 I/O1 Vcc GND I/O2 I/O3 WE A4 A5 A6 A7
PIN CONFIGURATION
32-Pin TSOP-2
A16 A15 A14 A13 OE I/O7 I/O6 GND Vcc I/O5 I/O4 A12 A11 A10 A9 A8
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
A0 A1 A2 A3 CE I/O0 I/O1 Vcc GND I/O2 I/O3 WE A4 A5 A6 A7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
A16 A15 A14 A13 OE I/o7 I/O6 GND Vcc I/O5 I/O4 A12 A11 A10 A9 A8
PIN DESCRIPTIONS
A0-A16 CE OE WE I/O1-I/O8 Vcc GND Address Inputs Chip Enable Input Output Enable Input Write Enable Input Bidirectional Ports Power Ground
TRUTH TABLE
Mode WE X H H L CE H L L L OE X H L X I/O Operation Vcc Current High-Z High-Z DOUT DIN ISB, ISB ICC, ICC ICC, ICC ICC, ICC Not Selected (Power-down) Output Disabled Read Write
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TBIAS TSTG PT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation Value 0.5 to Vcc + 0.5 55 to +125 65 to +150 1.0 Unit V °C °C W
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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Integrated Circuit Solution Inc.
SR019-0C
IS63LV1024
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C VC C 3.3V ± 0.3V 3.3V ± 0.3V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND VIN VCC GND VOUT VCC, Outputs Disabled Com. Ind. Com. Ind. Test Conditions VCC = Min., IOH = 4.0 mA VCC = Min., IOL = 8.0 mA Min. 2.4 2.2 0.3 2 5 2 5 Max. 0.4 VCC + 0.3 0.8 2 5 2 5 Unit V V V V µA µA
Notes: 1. VIL = 3.0V for pulse width less than 10 ns. 2. The Vcc operating range for 8 ns is 3.3V +10%, -5%.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter ICC ISB Vcc Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., CE = VIL IOUT = 0 mA, f = Max. VCC = Max., VIN = VIH or VIL CE VIH, f = 0 VCC = Max., CE VCC 0.2V, VIN > VCC 0.2V, or VIN 0.2V, f = 0 Com. Ind. Com. Ind. Com. Ind. -8 ns Min. Max. 160 170 30 40 10 15 -10 ns Min. Max. 150 160 30 40 10 15 -12 ns Min. Max. 140 150 30 40 10 15 -15 ns Min. Max. Unit 130 140 30 40 10 15 mA mA
ISB
mA
Notes: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
C A P A C I T A N C E( 1 , 2 )
Symbol CIN CI/O Parameter Input Capacitance Input/Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.
Integrated Circuit Solution Inc.
SR019-0C
3
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