Details, datasheet, quote on part number: BC107
PartBC107
CategorySemiconductors - Discretes => Transistors - Bipolar - (BJT) Single
TitleBIPOLAR TRANSISTOR, NPN, 45V, TO-18
Description
CompanyMULTICOMP
DatasheetDownload BC107 datasheet
Quote
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Specifications 
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo45V
Transition Frequency Typ ft150MHz
DC Collector Current200mA
Power Dissipation Pd600mW
DC Current Gain hFE110
Operating Temperature Range-
Transistor Case StyleTO-18
No. of Pins3
MSL-
BC107 photo

 

Features, Applications

Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation = 25C Derate above 25C Power Dissipation = 25C Derate above 25C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Rth (j-c) 175 C/W Symbol VCEO VCBO VEBO A V Unit

VCB BC107 BC108 VCB = 0 Tamb 125C BC107 VCB 0 BC108 VCB = 10A, VCE 5V B Group C Group = 2mA, VCE 108 A Group B Group C Group

Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage

Description Symbol Test Condition IB = The value for which 11mA at VCE = 1V VCE = 100MHz VCE = 200Hz VCB = 1MHz ALL = 2mA, VCE 108 A Group B Group C Group = 2mA, VCE 5V A Group B Group C Group = 2mA, VCE 5V A Group B Group C Group Minimum Maximum Unit

Specifications

VCEO (V) VCBO maximum (V) IC (A) hFE minimum 2mA fT minimum (*Typical) (V) Ptot (mW) Type Package Part Number


 

Some Part number from the same manufacture MULTICOMP
BC107A Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 150MHz ; DC Collector Current: 200mA ; Power Dissipation Pd: 600mW ; DC Current Gain hFE:
BC107B
BC108 Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 20V ; Transition Frequency Typ ft: 150MHz ; DC Collector Current: 200mA ; Power Dissipation Pd: 600mW ; DC Current Gain hFE:
BC108B
BC108C
BC109
BC109B
BC109C
BC140-16 Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 40V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 1A ; Power Dissipation Pd: 800mW ; DC Current Gain hFE: 250 ; Operating
BC141-16 Specifications: Transistor Polarity: - ; Collector Emitter Voltage V(br)ceo: - ; Transition Frequency Typ ft: - ; DC Collector Current: - ; Power Dissipation Pd: - ; DC Current Gain hFE: - ; Operating
BC160-16 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 40V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 1A ; Power Dissipation Pd: 800mW ; DC Current Gain hFE: 250 ; Operating
BC161-16 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 60V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 1A ; Power Dissipation Pd: 800mW ; DC Current Gain hFE: 250 ; Operating
BC177 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 200MHz ; DC Collector Current: 200mA ; Power Dissipation Pd: 600mW ; DC Current Gain hFE:
BC177B
BC237B Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 200MHz ; DC Collector Current: 100mA ; Power Dissipation Pd: 350mW ; DC Current Gain hFE:
BC327.25 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 260MHz ; DC Collector Current: 800mA ; Power Dissipation Pd: 625mW ; DC Current Gain hFE:
BC337.25 Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 210MHz ; DC Collector Current: 800mA ; Power Dissipation Pd: 625mW ; DC Current Gain hFE:
BC461 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 60V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 600mA ; Power Dissipation Pd: 1W ; DC Current Gain hFE: 40 ; Operating
BC640 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: -80V ; Transition Frequency Typ ft: 150MHz ; DC Collector Current: 1mA ; Power Dissipation Pd: 800mW ; DC Current Gain hFE:
2N2646 Specifications: Repetitive Peak Forward Current Itrm: 2A ; Peak Emitter Current: 1A ; Valley Current Iv: 6mA ; Power Dissipation Pd: 300mW ; Operating Temperature Range: -65C to +125C ; Transistor Case
2N2647
Same catergory

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GBPC25010T/W : Bridge Rectifiers - 1000 V - 25 A - GBPC-T/W. s: No. of Phases: - ; Repetitive Reverse Voltage Vrrm Max: - ; Forward Current If(AV): - ; Forward Voltage VF Max: - ; Power Dissipation Pd: - ; Diode Mounting Type: - ; Operating Temperature Range: - ; Bridge Rectifier Case Style: - ; No. of Pins: -.

KBP2005G : Bridge Rectifier, Single, 2A, 50V, KBP. s: No. of Phases: Single ; Repetitive Reverse Voltage Vrrm Max: 50V ; Forward Current If(AV): 2A ; Forward Voltage VF Max: 1.1V ; Power Dissipation Pd: - ; Diode Mounting Type: Through Hole ; Operating Temperature Range: -55C to +150C ; Bridge Rectifier Case Style: KBP ; No. of Pins: 4.

TISP4P015L1N : SIDAC, 8V, 18A, SOT23-5. s: Breakover Voltage Range: 15V ; Breakover Current Max.: - ; Peak Forward Current: - ; Thyristor Case: SOT-23 ; No. of Pins: 5.

FEP16GT-E3/45 : ULTRAFAST RECTIFIER CMN CTHD 16A TO220AB. s: No. of Phases: - ; Diode Type: Fast Recovery ; Repetitive Reverse Voltage Vrrm Max: 400V ; Forward Current If(AV): 16A ; Diode Configuration: Dual Common Cathode ; Forward Voltage VF Max: 1.3V ; Module Configuration: - ; Reverse Recovery Time trr Max: 35ns ; Forward Surge Current Ifsm Max: 125A ; Operating.

U30D20A : ULTRAFAST RECTIFIER CMN ANODE 15A TO-247. s: No. of Phases: - ; Diode Type: Fast Recovery ; Repetitive Reverse Voltage Vrrm Max: 200V ; Forward Current If(AV): 15A ; Diode Configuration: Dual Common Anode ; Forward Voltage VF Max: 975mV ; Module Configuration: - ; Reverse Recovery Time trr Max: 35ns ; Forward Surge Current Ifsm Max: 300A ; Operating.

VFT4045C-M3/4W : SCHOTTKY RECTIFIER ARRAY, DUAL COMMON CATHODE, 40A, ITO-220AB. s: No. of Phases: - ; Diode Type: Schottky ; Repetitive Reverse Voltage Vrrm Max: 45V ; Forward Current If(AV): 40A ; Diode Configuration: Dual Common Cathode ; Forward Voltage VF Max: 580mV ; Module Configuration: - ; Reverse Recovery Time trr Max: - ; Forward Surge Current Ifsm Max: 240A.

VS-48CTQ060PBF : SCHOTTKY RECTIFIER CMN CTHD 40A TO-220AB. s: No. of Phases: - ; Diode Type: Schottky ; Repetitive Reverse Voltage Vrrm Max: 60V ; Forward Current If(AV): 40A ; Diode Configuration: Dual Common Cathode ; Forward Voltage VF Max: 830mV ; Module Configuration: - ; Reverse Recovery Time trr Max: - ; Forward Surge Current Ifsm Max: 1kA ; Operating Temperature.

VS-HFA30PB120PBF : FAST DIODE, 30A, 1.2KV, TO-247AC. s: No. of Phases: - ; Diode Type: Fast Recovery ; Repetitive Reverse Voltage Vrrm Max: 1.2kV ; Forward Current If(AV): 30A ; Diode Configuration: - ; Forward Voltage VF Max: 5.7V ; Module Configuration: - ; Reverse Recovery Time trr Max: 170ns ; Forward Surge Current Ifsm Max: 120A ; Operating Temperature Range: -55C.

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2MBI450VH-120-50 : IGBT, 2 PK, V SE, 450A, 1200V, M249G. s: Module Configuration: Dual ; Transistor Polarity: N Channel ; DC Collector Current: 520A ; Collector Emitter Voltage Vces: 1.2kV ; Power Dissipation Pd: - ; Collector Emitter Voltage V(br)ceo: - ; Operating Temperature Range: - ; Transistor Case Style: Module ; No. of Pins: -.

SKM150GAL12V : Transistor. s: Transistor Type: IGBT Module ; DC Collector Current: 225A ; Collector Emitter Voltage Vces: 1.2kV ; Power Dissipation Pd: - ; Collector Emitter Voltage V(br)ceo: 940mV ; Operating Temperature Range: - ; Transistor Case Style: SKiM 93 ; No. of Pins: 7 ; MSL: -.

2N4391 : N CHANNEL JFET, -55V, TO-206AA. s: Transistor Type: JFET ; Breakdown Voltage Vbr: -40V ; Zero Gate Voltage Drain Current Idss: - ; Gate-Source Cutoff Voltage Vgs(off) Max: -10V ; Power Dissipation Pd: 1.8W ; Operating Temperature Range: -55C to +200C ; Transistor Case Style: - ; No. of Pins: 3.

2N7002K-7 : MOSFET, N CH, 60 V, 800mA, SOT-23. s: Transistor Polarity: N Channel ; Continuous Drain Current Id: 800mA ; Drain Source Voltage Vds: 60V ; On Resistance Rds(on): 2ohm ; Rds(on) Test Voltage Vgs: 10V ; Threshold Voltage Vgs Typ: 1.6V ; Power Dissipation Pd: 350mW ; Operating Temperature Range: -65C to +150C ; Transistor Case Style: SOT-23 ; No. of Pins:.

BUK663R5-55C,118 : N CH MOSFET, TRENCH AUTOMOTIVE, 55V, 120A, 4-D2PAK. s: Transistor Polarity: N Channel ; Continuous Drain Current Id: 120A ; Drain Source Voltage Vds: 55V ; On Resistance Rds(on): 0.00286ohm ; Rds(on) Test Voltage Vgs: 10V ; Threshold Voltage Vgs Typ: 2.3V ; Power Dissipation Pd: 263W ; Operating Temperature Range: -55C to +175C ; Transistor Case Style:.

S6006DRP : SCR THYRISTOR, 3.8A, 600V, TO-252AA. s: Peak Repetitive Off-State Voltage, Vdrm: 600V ; Gate Trigger Current Max, Igt: 15mA ; Current It av: 3.8A ; On State RMS Current IT(rms): 6A ; Peak Non Rep Surge Current Itsm 50Hz: 83A ; Holding Current Max Ih: 30mA ; Gate Trigger Voltage Max Vgt: 1.5V ; Operating Temperature Range: -40C to +125C ; Thyristor.

BCP53-16T1G : BIPOLAR TRANSISTOR, PNP, -80V. s: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 80V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: -1.5A ; Power Dissipation Pd: 1.5W ; DC Current Gain hFE: 100 ; Operating Temperature Range: -65C to +150C ; Transistor Case Style: SOT-223 ; No. of Pins: 3 ; MSL: -.

PDTC114TT,215 : BRT TRANSISTOR, NPN, 50V, 100MA, 10KOHM / OPEN, 3-SOT-23. s: Collector Emitter Voltage V(br)ceo: 50V ; Continuous Collector Current Ic: 100mA ; Base Input Resistor R1: 10kohm ; Base-Emitter Resistor R2: - ; Resistor Ratio, R1 / R2: - ; RF Transistor Case: SOT-23 ; No. of Pins: 3.

 
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