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Details, datasheet, quote on part number: BC107
 
 
Part numberBC107
CategorySemiconductors - Discretes => Transistors - Bipolar - (BJT) Single
TitleBIPOLAR TRANSISTOR, NPN, 45V, TO-18
Description
Specifications
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo45V
Transition Frequency Typ ft150MHz
DC Collector Current200mA
Power Dissipation Pd600mW
DC Current Gain hFE110
Operating Temperature Range-
Transistor Case StyleTO-18
No. of Pins3
MSL-
CompanyMULTICOMP
DatasheetDownload BC107 datasheet
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BC107 photo


 
Specifications, Features, Applications

Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation = 25C Derate above 25C Power Dissipation = 25C Derate above 25C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Rth (j-c) 175 C/W Symbol VCEO VCBO VEBO A V Unit

VCB BC107 BC108 VCB = 0 Tamb 125C BC107 VCB 0 BC108 VCB = 10A, VCE 5V B Group C Group = 2mA, VCE 108 A Group B Group C Group

Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage

Description Symbol Test Condition IB = The value for which 11mA at VCE = 1V VCE = 100MHz VCE = 200Hz VCB = 1MHz ALL = 2mA, VCE 108 A Group B Group C Group = 2mA, VCE 5V A Group B Group C Group = 2mA, VCE 5V A Group B Group C Group Minimum Maximum Unit

Specifications

VCEO (V) VCBO maximum (V) IC (A) hFE minimum 2mA fT minimum (*Typical) (V) Ptot (mW) Type Package Part Number




Some Part number from the same manufacture MULTICOMP
BC107A Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 150MHz ; DC Collector Current: 200mA ; Power Dissipation Pd: 600mW ; DC Current Gain hFE:
BC107B
BC108 Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 20V ; Transition Frequency Typ ft: 150MHz ; DC Collector Current: 200mA ; Power Dissipation Pd: 600mW ; DC Current Gain hFE:
BC108B
BC108C
BC109
BC109B
BC109C
BC140-16 Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 40V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 1A ; Power Dissipation Pd: 800mW ; DC Current Gain hFE: 250 ; Operating
BC141-16 Specifications: Transistor Polarity: - ; Collector Emitter Voltage V(br)ceo: - ; Transition Frequency Typ ft: - ; DC Collector Current: - ; Power Dissipation Pd: - ; DC Current Gain hFE: - ; Operating
BC160-16 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 40V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 1A ; Power Dissipation Pd: 800mW ; DC Current Gain hFE: 250 ; Operating
BC161-16 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 60V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 1A ; Power Dissipation Pd: 800mW ; DC Current Gain hFE: 250 ; Operating
BC177 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 200MHz ; DC Collector Current: 200mA ; Power Dissipation Pd: 600mW ; DC Current Gain hFE:
BC177B
BC237B Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 200MHz ; DC Collector Current: 100mA ; Power Dissipation Pd: 350mW ; DC Current Gain hFE:
BC327.25 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 260MHz ; DC Collector Current: 800mA ; Power Dissipation Pd: 625mW ; DC Current Gain hFE:
BC337.25 Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 210MHz ; DC Collector Current: 800mA ; Power Dissipation Pd: 625mW ; DC Current Gain hFE:
BC461 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 60V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 600mA ; Power Dissipation Pd: 1W ; DC Current Gain hFE: 40 ; Operating
BC640 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: -80V ; Transition Frequency Typ ft: 150MHz ; DC Collector Current: 1mA ; Power Dissipation Pd: 800mW ; DC Current Gain hFE:
2N2646 Specifications: Repetitive Peak Forward Current Itrm: 2A ; Peak Emitter Current: 1A ; Valley Current Iv: 6mA ; Power Dissipation Pd: 300mW ; Operating Temperature Range: -65C to +125C ; Transistor Case
2N2647