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Details, datasheet, quote on part number: BC107
PartBC107
CategorySemiconductors - Discretes => Transistors - Bipolar - (BJT) Single
TitleBIPOLAR TRANSISTOR, NPN, 45V, TO-18
Description
CompanyMULTICOMP
DatasheetDownload BC107 datasheet
QuoteFind where to buy BC107
 
Specifications 
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo45V
Transition Frequency Typ ft150MHz
DC Collector Current200mA
Power Dissipation Pd600mW
DC Current Gain hFE110
Operating Temperature Range-
Transistor Case StyleTO-18
No. of Pins3
MSL-

BC107 photo

 

Features, Applications

Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation = 25C Derate above 25C Power Dissipation = 25C Derate above 25C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Rth (j-c) 175 C/W Symbol VCEO VCBO VEBO A V Unit

VCB BC107 BC108 VCB = 0 Tamb 125C BC107 VCB 0 BC108 VCB = 10A, VCE 5V B Group C Group = 2mA, VCE 108 A Group B Group C Group

Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage

Description Symbol Test Condition IB = The value for which 11mA at VCE = 1V VCE = 100MHz VCE = 200Hz VCB = 1MHz ALL = 2mA, VCE 108 A Group B Group C Group = 2mA, VCE 5V A Group B Group C Group = 2mA, VCE 5V A Group B Group C Group Minimum Maximum Unit

Specifications

VCEO (V) VCBO maximum (V) IC (A) hFE minimum 2mA fT minimum (*Typical) (V) Ptot (mW) Type Package Part Number


Some Part number from the same manufacture MULTICOMP
BC107A Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 150MHz ; DC Collector Current: 200mA ; Power Dissipation Pd: 600mW ; DC Current Gain hFE:
BC107B
BC108 Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 20V ; Transition Frequency Typ ft: 150MHz ; DC Collector Current: 200mA ; Power Dissipation Pd: 600mW ; DC Current Gain hFE:
BC108B
BC108C
BC109
BC109B
BC109C
BC140-16 Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 40V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 1A ; Power Dissipation Pd: 800mW ; DC Current Gain hFE: 250 ; Operating
BC141-16 Specifications: Transistor Polarity: - ; Collector Emitter Voltage V(br)ceo: - ; Transition Frequency Typ ft: - ; DC Collector Current: - ; Power Dissipation Pd: - ; DC Current Gain hFE: - ; Operating
BC160-16 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 40V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 1A ; Power Dissipation Pd: 800mW ; DC Current Gain hFE: 250 ; Operating
BC161-16 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 60V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 1A ; Power Dissipation Pd: 800mW ; DC Current Gain hFE: 250 ; Operating
BC177 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 200MHz ; DC Collector Current: 200mA ; Power Dissipation Pd: 600mW ; DC Current Gain hFE:
BC177B
BC237B Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 200MHz ; DC Collector Current: 100mA ; Power Dissipation Pd: 350mW ; DC Current Gain hFE:
BC327.25 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 260MHz ; DC Collector Current: 800mA ; Power Dissipation Pd: 625mW ; DC Current Gain hFE:
BC337.25 Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 210MHz ; DC Collector Current: 800mA ; Power Dissipation Pd: 625mW ; DC Current Gain hFE:
BC461 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 60V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 600mA ; Power Dissipation Pd: 1W ; DC Current Gain hFE: 40 ; Operating
BC640 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: -80V ; Transition Frequency Typ ft: 150MHz ; DC Collector Current: 1mA ; Power Dissipation Pd: 800mW ; DC Current Gain hFE:
2N2646 Specifications: Repetitive Peak Forward Current Itrm: 2A ; Peak Emitter Current: 1A ; Valley Current Iv: 6mA ; Power Dissipation Pd: 300mW ; Operating Temperature Range: -65C to +125C ; Transistor Case
2N2647
 
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