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Details, datasheet, quote on part number: BC141-16
 
 
Part numberBC141-16
CategorySemiconductors - Discretes => Transistors - Bipolar - (BJT) Single
TitleTRANSISTOR, NPN, 60V, 1A, TO-39
Description
Specifications
Transistor Polarity-
Collector Emitter Voltage V(br)ceo-
Transition Frequency Typ ft-
DC Collector Current-
Power Dissipation Pd-
DC Current Gain hFE-
Operating Temperature Range-
Transistor Case Style-
No. of Pins-
MSL-
CompanyMULTICOMP
DatasheetDownload BC141-16 datasheet
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Specifications, Features, Applications
High current (maximum 1 A) Low voltage (maximum 60 V) NPN transistor a TO-39 metal package
Designed for general purpose switching and amplification applications

Symbol VCBO VCEO VEBO PC TJ Tstg Parameter Collector - base voltage Collector - emitter voltage Emitter - base voltage Collector current - continuous Base current Collector power dissipation TA 45C Junction temperature Storage temperature range Value to 175 Unit W C

Symbol Rth j-c Rth j-a Parameter Thermal resistance from junction to case Thermal resistance, junction to ambient Maximum 35 200 Unit K/W

(TC = 25C Unless Otherwise Specified) Conditions 1 A; VCE = 0; VEB 5 V VCB 60 V dc, = 0 VCB 60 V dc, = 100 A; VCE = 100 mA; VCE 1 V Minimum Typical Maximum Unit A -

Parameter Collector - emitter saturation voltage Base - emitter on voltage Emitter cut-off current Collector cut-off current DC Current Gain DC Current Gain

Symbol hFE3 fT Cob (TC = 25C Unless Otherwise Specified) Conditions 1 A; VCE = 50 mA; VCE = 100 MHz VCB = 1 MHz Minimum Typical Maximum Unit MHz pF

Parameter DC Current Gain Transition frequency Output capacitance

Symbol ton toff Parameter Turn - on time Turn - off time Conditions = 100 mA; = 5 mA; -5 mA Minimum Typical Maximum 250 850 Unit ns

Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. Premier Farnell plc 2011.




Some Part number from the same manufacture MULTICOMP
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BC177 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 45V ; Transition Frequency Typ ft: 200MHz ; DC Collector Current: 200mA ; Power Dissipation Pd: 600mW ; DC Current Gain hFE:
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BC461 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: 60V ; Transition Frequency Typ ft: 50MHz ; DC Collector Current: 600mA ; Power Dissipation Pd: 1W ; DC Current Gain hFE: 40 ; Operating
BC640 Specifications: Transistor Polarity: PNP ; Collector Emitter Voltage V(br)ceo: -80V ; Transition Frequency Typ ft: 150MHz ; DC Collector Current: 1mA ; Power Dissipation Pd: 800mW ; DC Current Gain hFE:
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TH20A
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