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Details, datasheet, quote on part number:64-05W
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Datasheet text preview:
BAR64...W
Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz up to 3 GHz Low resistance and long carrier lifetime Very low capacitance at zero volts reverse bias at frequencies above 1 GHz Very low signal distortion BAR64-05W
C1/C2 3
3
BAR64-04W
C1/A2 3
BAR64-04W BAR64-05W BAR64-06W
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation Junction temperature Operating temperature range Storage temperature
Thermal Resistance Parameter Junction - soldering point1)
1For
calculation of RthJA please refer to Application Note Thermal Resistance
1
2 1
VSO05561
BAR64-06W
A1/A2 3
-
1 A1
2 C2
EHA07181
1 A1
2 A2
EHA07179
1 C1
2 C2
EHA07187
Type
Marking PPs PRs PSs 1 = A1 1 = A1 1 = C1
Pin Configuration 2 = C2 2 = A2 2 = C2 3 = C1/2 3 = A1/2
Package SOT323 SOT323
3 = C1/A2 SOT323
Symbol VR IF Ptot Tj Top Tstg
Value 150 100 250 150 -55 ... 150 -55 ... 150
Unit V mA mW °C
TS
115 °C
Symbol RthJS
Value 140
Unit K/W
Aug-28-2001
BAR64...W
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 5 µA Reverse current VR = 20 V Forward voltage IF = 50 mA AC Characteristics Diode capacitanceVR = 20 V, f = 1 MHz IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance rr
Symbol min. V(BR) IR VF 150 -
Values typ. max. 50 1.1
Unit
V nA V
CT rf
-
0.23
0.35
pF
12.5 2.1 0.85 1.55 1.2
20 2.8 1.35 -
2
Charge carrier life time
-
LS
Aug-28-2001
µs nH
Forward resistance
BAR64...W
Diode capacitance CT =
f = 1MHz
f = 100MHz
10 3
Ohm
0.7
pF
10 2 0.5
0.4
1 MHz 100 MHz 1 GHz
CT
rf
10 1 0.3
0.2
10 0
0.1 10 -1 -2 10
0 0
2
4
6
8
10
12
14
16
V
20
10
-1
10
0
VR
TA = Parameter
10 3
mA
140
mA
10 2 100
IF
10 1
IF
80
60
10 0
40 10 -1 20 10 -2 0
0 0
20
40
60
80
100
120 °C
150
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
TS
3
Forward current IF =
(TS )
Forward current IF =
(VF)
(VR )
Forward resistance rf =
(IF )
10
1
10
2
mA10 3
IF
V
1
VF
Aug-28-2001
BAR64...W
Intermodulation intercept point
Permissible Pulse Load
IP3 =
(IF); f = Parameter
IFmax / IFDC =
10 2
(tp )
10 2
f=1800MHz
IFmax/IFDC
f=900MHz
-
dBm
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
IP3
10 1 -1 10
10
0
mA
10
1
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
10
-1
s
10
1
IF
tP
10 3
K/W
10 2
RthJS
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
Permissible Puls Load RthJS =
(tp )
s
10
0
tP
4
Aug-28-2001
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