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Part: 71013SEE3218
Category:
Description:
Company: Infineon Technologies Corporation
Datasheet: Download 71013SEE3218 datasheet File size : 115 kB
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PROFET® BTS 307
Smart Highside Power Switch
Features
· Overload protection · Current limitation · Short circuit protection · Thermal shutdown · Overvoltage protection · Fast demagnetization of inductive loads · Reverse battery protection1) · Open drain diagnostic output · Open load detection in OFF-state · CMOS compatible input · Loss of ground and loss of Vbb protection · Electrostatic discharge (ESD) protection
Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO)
V bb(AZ) Vbb(on) RON I L(ISO )
65 V 5.8 ... 58 V 250 m 1.7 A
TO-220AB/5
5 1 Straight leads
5
5 1
Standard
SMD
Application
· µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads · Most suitable for inductive loads · Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions.
+ V bb
3
Voltage source
Overvoltage protection
Current limit
Gate protection
V Logic
Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads
OUT
2
IN
Temperature sensor
5
Load
4
ST
Short circuit detection
GND
® PROFET
Load GND
1
Signal GND
1)
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.
Semiconductor Group
1
08.96
BTS 307
Pin 1 2 3 4 5 Symbol GND IN Vb b ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Supply voltage for full short circuit protection2) Tj Start=-40 ...+150°C Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 °C Electrostatic discharge capability (ESD) IN, ST: (Human Body Model) all other pins: Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 6
Symbol Vbb Vbb
Values 65 40 self-limited -40 ...+150 -55 ...+150 50 1.0 tbd (>1.0) -0.5 ... +36 ±2 . 0 ±5 . 0
Unit V V A °C W kV V mA
IL Tj Tstg P tot VESD VIN IIN IST
Thermal Characteristics
Parameter and Conditions Thermal resistance S y mbol chip - case: RthJC
junction - ambient (free air):
Rt h J A
min ---
Values typ max -2.5 -75
Unit K/W
2)
Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with higher Vbb.
Semiconductor Group
2
BTS 307 Electrical Characteristics
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics
Tj=25 °C: Tj=150 °C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=32 V, VIN= 0, see diagram page 7 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 , Vbb = 20V, Tj =-40...+150°C Slew rate on, 10 to 30% VOUT, RL = 12 , Vbb = 20V, Tj =-40...+150°C Slew rate off, 10 to 30% VOUT, RL = 12 , Vbb = 20V, Tj =-40...+150°C
On-state resistance (pin 3 to 5) IL = 2 A, Vbb = 24 V
RON
-1.4
220 390 1.7 --
250 500 -1.1
m
IL(ISO) IL(GNDhigh)
--
A mA µs V/µs V/µs
ton t off
dV /dton -dV/dtoff
15 20 ---
-----
80 70 6 7
Operating Parameters Tj =-40...+150°C: Operating voltage 3) Tj =-40...+150°C: Undervoltage shutdown Tj =-40...+150°C: Undervoltage restart Undervoltage restart of charge pump Tj =-40...+150°C: see diagram page 11 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150°C: Overvoltage protection4) Ibb=40 mA Standby current (pin 3), VIN=0 Tj=-40...+150°C: Operating current (Pin 1)5), VIN=5 V
Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp)
Vbb(under)
5.8 2.7 ---65
---5.6 0.4 70
58 4.7 4.9 7.5 ---
V V V V V V µA
Vbb(AZ) Ibb(off) IGND
---
10 2.2
50 --
mA
3) 4) 5)
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 7. Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
3
BTS 307
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Protection Functions Initial peak short circuit current limit (pin 3 to 5) Tj =-40°C: Tj =25°C: Tj =+150°C: Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 1 A, Tj =-40..+150°C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 6) Diagnostic Characteristics Open load detection current
(included in standby current Ibb(off))
I L(SCp)
--4.0 -10 ---10 -19 --75 --32 A
VON(CL) Tjt Tjt -Vbb
59 150 ---
V °C K V
IL(off) Tj=-40..150°C: VOUT(OL) VON(SC)
-2.4 --
6 3 2.5
-4 --
µA V V
Open load detection voltage Short circuit detection voltage (pin 3 to 5)
6)
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).
Semiconductor Group
4
BTS 307
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Input and Status Feedback7) Input resistance see circuit page 6 Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 3.5? V Delay time for status with open load
after Input neg. slope (see diagram page 11)
RI VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on)
td(ST OL3)
-1 0.8 -1 10 --
20 --0.5 -25 200
-2.5 --30 70 --
k V V V µA µA µs
Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low)
5.4 --
6.1 --
-0.4
V
7)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
5
Others parts begin by 71
71-1
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