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Part: BAT14-03W
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
Description: Silicon Schottky Diode
Company: Infineon Technologies Corporation
Datasheet: Download BAT14-03W datasheet File size : 82 kB
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Datasheet text preview:
BAT14-03W
Silicon Schottky Diode DBS mixer applications up to 12 GHz Low noise figure Low barrier type
2 1
Junction temperature Storage temperature Thermal Resistance
Operating temperature range
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Junction - soldering point1)
VPS05176
2
1
EHA07007
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BAT14-03W
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, TS
Marking O/white
Pin Configuration 1=C 2=A
Symbol VR IF
Package SOD323
Value 4 90 100 150 -55 ... 125 -55 ... 150 Unit V mA mW °C °C °C
85 °C
Ptot Tj Top Tstg
RthJS
690
K/W
Jul-06-2001
BAT14-03W
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics (per diode) Breakdown voltage I(BR) = 5 µA Forward voltage IF = 1 mA IF = 10 mA AC characteristics (per diode)
Diode capacitance VR = 0 V, f = 1 MHz CT RF
Symbol min. V(BR) VF 0.36 0.48 4
Values typ. max. -
Unit
V
0.43 0.55 0.22 5.5
0.52 0.66 0.35 pF
IF = 10mA / 50mA
2
Jul-06-2001
Forward resistance
BAT14-03W
Forward current IF = f (VF ) TA = parameter
10 2
mA
Reverse current IR = f (VR) T A = Parameter
10 1
mA
10 1
10 0
TA=125°C TA=85°C
10 0
IR
10 -1
IF
-40°C 25°C 85°C 125°C
10 -1 10 -2
TA=25°C
10 -2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1.0
10 -3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
VF
VR
Diode capacitance CT = f (VR) f = 1MHz
0.50
pF
0.40 0.35
CT
0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
VR
3
Jul-06-2001
Others parts begin by ba
BA-1 BA-2 BA-3 BA-4 BA-5 BA-6 BA-7 BA-8 BA-9 BA-10 BA-11 BA-12 BA-13 BA-14 BA-15 BA-16 BA-17 BA-18
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