Details, datasheet, quote on part number: BAV99WE6327
PartBAV99WE6327
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionSilicon Switching Diode Array
CompanyInfineon Technologies Corporation
DatasheetDownload BAV99WE6327 datasheet
Cross ref.Similar parts: TLE4284DV, BAV99WT1G
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Features, Applications

Parameter Diode reverse voltage Peak reverse voltage Forward current
Configuration series dual series dual series

Surge forward current, 1 s Total power dissipation TS 110C Junction temperature Storage temperature

calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics 85 V Breakdown voltage V (BR) I (BR) 100 A Reverse current 150 C Forward voltage mV A

Electrical Characteristics = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics 1.5 Diode capacitance = 1 MHz Reverse recovery time = 10 mA, = 10 mA, measured = 100 Test circuit for reverse recovery time


 

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