Details, datasheet, quote on part number: BAV99WE6327
PartBAV99WE6327
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionSilicon Switching Diode Array
CompanyInfineon Technologies Corporation
DatasheetDownload BAV99WE6327 datasheet
Cross ref.Similar parts: TLE4284DV, BAV99WT1G
Quote
Find where to buy
 
  

 

Features, Applications

Parameter Diode reverse voltage Peak reverse voltage Forward current
Configuration series dual series dual series

Surge forward current, 1 s Total power dissipation TS 110C Junction temperature Storage temperature

calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics 85 V Breakdown voltage V (BR) I (BR) 100 A Reverse current 150 C Forward voltage mV A

Electrical Characteristics = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics 1.5 Diode capacitance = 1 MHz Reverse recovery time = 10 mA, = 10 mA, measured = 100 Test circuit for reverse recovery time


 

Related products with the same datasheet
BAV99WE6433
Some Part number from the same manufacture Infineon Technologies Corporation
BAV99WE6433 Silicon Switching Diode Array
BAW100
BAW101
BAW156
BAW56
BAW56S
BAW56U Diodes For High Speed Switching Applications
BAW56W Silicon Switching Diode Array
BAW78 Silicon Switching Diodes
BAW78A
BAW78D Diodes For High Speed Switching Applications
BAW78M Silicon Switching Diode
BAW79
BAW79A
BAW79D Diodes For High Speed Switching Applications
BAX280 Fred Diode
BB112 Silicon Variable Capacitance Diode
BB304 FM Variable Capacitance Diode
BB419 Silicon Variable Capacitance Diode
BB439
BB512
 
0-C     D-L     M-R     S-Z