Details, datasheet, quote on part number: BAW156E6327
PartBAW156E6327
CategoryDiscrete => Diodes & Rectifiers => General Purpose Diodes
DescriptionSilicon Switching Diode Array
CompanyInfineon Technologies Corporation
DatasheetDownload BAW156E6327 datasheet
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Features, Applications
Low-leakage applications Medium speed switching times Common anode configuration
Parameter Diode reverse voltage Peak reverse voltage Forward current

Surge forward current, 1 s Total power dissipation Ts 35C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAW156

calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics 85 V Breakdown voltage V (BR) I (BR) 100 A Reverse current 150 C Forward voltage mA AC Characteristics Diode capacitance = 1 MHz Reverse recovery time = 10 mA, = 10 mA, measured = 100 Test circuit for reverse recovery time




 

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