Details, datasheet, quote on part number: BAW56E6327
PartBAW56E6327
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionSilicon Switching Diode Array
CompanyInfineon Technologies Corporation
DatasheetDownload BAW56E6327 datasheet
Cross ref.Similar parts: BAW56
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Features, Applications
Silicon Switching Diode For high-speed switching applications Common anode configuration
Configuration common anode double common anode common anode double common anode common anode

Maximum Ratings = 25C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, 1 s Total power dissipation TS 103C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering BAW56U BAW56W

calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics 85 Breakdown voltage V(BR) I(BR) 100 A Reverse current 150 C Forward voltage mV A

AC Characteristics Diode capacitance = 1 MHz Reverse recovery time = 10 mA, = 10 mA, measured = 100 Test circuit for reverse recovery time


 

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