Details, datasheet, quote on part number: BAW78M
PartBAW78M
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes => Small Signal
TitleSmall Signal
DescriptionSilicon Switching Diode
CompanyInfineon Technologies Corporation
DatasheetDownload BAW78M datasheet
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Features, Applications
Silicon Switching Diode Preliminary data Switching applications High breakdown voltage
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage
Surge forward current, 1 s Total power dissipation 110 C Junction temperature Storage temperature
Thermal Resistance Junction - ambient RthJA RthJS 95 40 K/W Junction - soldering point

Electrical Characteristics = 25C, unless otherwise specified. Parameter DC characteristics Breakdown voltage I(BR) 100 A Forward voltage 2 A Reverse current 400 V Reverse current 150 C

AC characteristics Diode capacitance = 1 MHz Reverse recovery time = 200 mA, = 200 mA, 100 , measured = 20mA trr 10 pF

Forward current = f (TA *;TS ) * Package mounted on epoxy
Permissible Pulse Load IFmax / IFDC = f(tp)


 

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