Details, datasheet, quote on part number: BAW78ME6433
PartBAW78ME6433
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
TitleSmall Signal
DescriptionSilicon Switching Diode
CompanyInfineon Technologies Corporation
DatasheetDownload BAW78ME6433 datasheet
  

 

Features, Applications
Silicon Switching Diode Preliminary data Switching applications High breakdown voltage
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage
Surge forward current, 1 s Total power dissipation 110 C Junction temperature Storage temperature
Thermal Resistance Junction - ambient RthJA RthJS 95 40 K/W Junction - soldering point

Electrical Characteristics = 25C, unless otherwise specified. Parameter DC characteristics Breakdown voltage I(BR) 100 A Forward voltage 2 A Reverse current 400 V Reverse current 150 C

AC characteristics Diode capacitance = 1 MHz Reverse recovery time = 200 mA, = 200 mA, 100 , measured = 20mA trr 10 pF

Forward current = f (TA *;TS ) * Package mounted on epoxy
Permissible Pulse Load IFmax / IFDC = f(tp)


 

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