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Part: BB644E6433
Category:
Discrete
-> Diodes & Rectifiers
-> Vacators Diodes
Description: Silicon Variable Capacitance Diode
Company: Infineon Technologies Corporation
Datasheet: Download BB644E6433 datasheet File size : 142 kB
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Datasheet text preview:
BB644 /BB664...
Silicon Variable Capacitance Diodes For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure
1
BB644 BB664/-02V
2
Type BB644 BB664 BB664-02V
Package SOD323 SCD80 SC79
Configuration single single single
LS(nH) 1.8 0.6 0.6
Marking yellow 4 44 4
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature R 5k IF Top Tstg 20 -55 ... 150 -55 ... 150 mA °C Symbol VR VRM Value 30 35 Unit V
1
Nov-14-2002
BB644 /BB664...
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT
Unit max. nA
typ.
IR 10 100
pF 39 29.4 2.5 2.4 41.8 31.85 2.7 2.55 16.4 11.8 0.6 44.5 34.2 2.85 2.75 17.8 12.6 2 0.75
%
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1 /CT28 CT2 /CT25 CT/CT
15 11 -
Capacitance ratio
VR = 1 V, VR = 25 V, f = 1 MHz VR = 1 V, VR = 28 V, f = 1 MHz
VR = 5 V, f = 470 MHz
1For
details please refer to Application Note 047.
2
Nov-14-2002
Series resistance
Capacitance matching1)
rS
BB644 /BB664...
Diode capacitance CT =
f = 1MHz
(VR )
Temperature coefficient of the diode
70 pF 60 55 50
10 -3
1/°C
CT
45 40 35 30 25 20 15 10 5 0 0 5 10 15 20 25
V
TC C
10 -4
35
10 -5 0 10
VR
T A = Parameter
10
-9
A 85°C
IR
10
-10
10
-11
0
4
8
12
Reverse current I R =
(V R)
25°C
16
20
24
V
30
VR
3
capacitance TCc =
(VR )
10
1
V
10
2
VR
Nov-14-2002
Others parts begin by bb
BB-1 BB-2 BB-3
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