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Part: BBY58-03WE6433
Category:
Discrete
-> Diodes & Rectifiers
-> Vacators Diodes
Description: Silicon Tuning Diode
Company: Infineon Technologies Corporation
Datasheet: Download BBY58-03WE6433 datasheet File size : 142 kB
Request For quote: Find where to buy BBY58-03WE6433
Datasheet text preview:
BBY58...
Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment For low frequency control elements such as TCXOs and VCXOs Very low capacitance spread
BBY58-05W BBY58-06W BBY58-07L4
1
BBY58-02L/V BBY58-02W BBY58-03W
Type BBY58-02L* BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W BBY58-07L4*
*Preliminary
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 10 20 -55 ... 150 -55 ... 150 Unit V mA °C
3
3 4
3
2
D1
D2
D1
D2
D1
D2
1
2
1
2 1
2
Package TSLP-2-1 SC79 SCD80 SOD323 SOT323 SOT323 TSLP-4-4
Configuration single, leadless single single single common cathode common anode parallel pair, leadless
LS(nH) 0.4 0.6 0.6 0.6 1.4 1.4 0.4
Marking 88 8 88 8 yel. B5s B6s B8
1
Nov-20-2002
BBY58...
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C
AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 6 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance ratio VR = 4 V, VR = 6 V, f = 1 MHz VR = 1 V, f = 470 MHz, BBY58-02L, -07L4 VR = 1 V, f = 470 MHz, all other 0.3 0.25 Series resistance CT4 /CT6 rS 1.15 1.3 1.45 CT1 /CT4 2.8 3.05 3.3 CT1 /CT3 CT 17.5 11.4 7.8 5.5 3.8 1.9 18.3 12.35 8.6 6 4.7 2.15 19.3 13.3 9.3 6.6 5.5 2.4 pF
Unit max. nA
typ.
IR 10 100
2
Nov-20-2002
BBY58...
Diode capacitance CT =
f = 1MHz
32
pF
(VR )
Normalized diode capacitance
C(TA) /C(25°C)= (TA ) f = 1MHz, VR = Parameter
1.05
1V 4V
1.03
CTA/C 25
24
1.02 1.01 1 0.99 0.98
CT
20
16
12
8 0.97 4 0.96
V
0 0
0.5
1
1.5
2
2.5
3
3.5
4
5
0.95 -30
-10
VR
Temperature coefficient of the diode
capacitance TCc =
10
-3
(VR)
TC C
1/°C
10
-4
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
VR
3
10
30
50
70
°C
100
TA
Nov-20-2002
Others parts begin by bb
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