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Part: BBY59
Category:
Discrete
-> Diodes & Rectifiers
Description: Silicon Tuning Diode
Company: Infineon Technologies Corporation
Datasheet: Download BBY59 datasheet File size : 142 kB
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Datasheet text preview:
BBY59...
Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in moblie communications equipment For control elements as TCXOS and VCXOS High capacitance ratio and good C-V linearity
1
BBY59-02V
2
Type BBY59-02V
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature
Package SC79
Configuration single
LS (nH) Marking 0.6 RR
Symbol VR IF Top Tstg
Value 15 50 -55 ... 150 -55 ... 150
Unit V mA °C
1
Jul-18-2002
BBY59...
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 10 V VR = 10 V, TA = 85 °C
AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V VR = 1 V, f = 470 MHz Series resistance CT1 /CT4 rS CT 26,6 13.6 8,4 6,1 3,4 27.8 15.3 9.5 6,95 4 0.45 29 17 10.9 7,8 4,6 0.7 pF
Unit max. nA
typ.
IR 20 100
2
Jul-18-2002
BBY59...
Diode capacitance CT =
f = 1MHz
(VR )
Temperature coefficient of the diode
2
60
pF
50 45
CT
40 35 30 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3
V
TCC
capacitance TCC =
0.00095 1/°C 0.00085 0.0008 0.00075 0.0007
(VR )
0.00065 0.0006 0.00055 0.0005 0.00045 0.0004 0.00035 0.0003 4 0.00025 0 0.5 1 1.5 2.5 3 3.5 4
V
5
VR
VR
3
Jul-18-2002
Others parts begin by bb
BB-1 BB-2 BB-3
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