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Part: BBY65
Category:
Discrete
-> Diodes & Rectifiers
Description: Silicon Tuning Diode
Company: Infineon Technologies Corporation
Datasheet: Download BBY65 datasheet File size : 142 kB
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Datasheet text preview:
BBY65...
Silicon Tuning Diode High Q hyperabrupt tuning diode Very low capacitance spread Designed for low tuning voltage operation for VCO's in mobile communications equipment For low frequency control elements such as TCXOS and VCXOS High capacitance ratio and good C-V linearity
1
BBY65-02V
2
Type BBY65-02V
Package SC79
Configuration single
LS(nH) Marking 0.6 F
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 15 50 -55 ... 150 -55 ... 150 Unit V mA °C
1
May-07-2003
BBY65...
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 10 V VR = 10 V, TA = 85 °C AC Characteristics Diode capacitance
VR = 0.3 V, f = 1 MHz VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.7 V, f = 1 MHz CT
Unit max. nA
typ.
IR 10 100
pF 28.2 2.6 29.5 20.25 9.8 4.45 2.7 10.9 4.55 0.6 30.8 2.8 0.9 pF pF
Capacitance ratio
VR = 0.3 V, VR = 4.7 V
CT0.3 / CT4.7 CT1 /CT3 rS
10 -
Capacitance ratio
VR = 1 V, VR = 3 V VR = 1 V, f = 470 MHz
2
May-07-2003
Series resistance
BBY65...
Diode capacitance CT =
f = 1MHz
40
(VR )
pf
30
CT
25
20
15
10
5
0 0
1
2
3
V VR
5
3
May-07-2003
Others parts begin by bb
BB-1 BB-2 BB-3
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