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Part: BC637
Category:
Discrete
-> Transistors
-> Bipolar
-> Audio Amplifier Application
-> NPN
Description: NPN Silicon af Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BC637 datasheet File size : 190 kB
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Datasheet text preview:
NPN Silicon AF Transistors
q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 636, BC 638,
BC 635 ... BC 639
BC 640 (PNP)
1
2 3
Type BC 635 BC 637 BC 639
Marking
Ordering Code Q68000-A3360 Q68000-A2285 Q68000-A3361
Pin Configuration 1 2 3 E C B
Package1) TO-92
If desired, selected transistors, type BC 63 5 10 (hFE = 63 ... 160), or BC 63 5 16 (hFE = 100 ... 250) are available. Ordering codes upon request.
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BC 635 ... BC 639
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - case2) Rth JA Rth JC
156 75
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg
Values BC 635 45 45
Unit BC 637 60 60 5 1 1.5 100 200 0.8 (1) 150 65 ... + 150 W °C mA A BC 639 80 100 V
Total power dissipation, TC = 90 °C1) Ptot
K/W
1)
2)
If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 °C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
BC 635 ... BC 639
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 635 BC 637 BC 639 Collector-base breakdown voltage IC = 100 µA BC 635 BC 637 BC 639 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 °C Emitter cutoff current VEB = 4 V DC current gain IC = 5 mA; VCE = 2 V IC = 150 mA; VCE = 2 V1) IC = 500 mA; VCE = 2 V1) Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter voltage1) IC = 500 mA; VCE = 2 V AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz fT 100 MHz V(BR)EB0 ICB0 IEB0 hFE 25 40 25 VCEsat VBE) 250 500 1 mV V 100 20 100 nA
µA
Values typ. max.
Unit
V(BR)CE0 45 60 80 V(BR)CB0 45 60 100 5
V
nA
1)
Pulse test: t 300 µs, D 2 %.
Semiconductor Group
3
BC 635 ... BC 639
Total power dissipation Ptot = f (TA; TC)
Collector cutoff current ICB0 = f (TA) VCB = 30 V
Permissible pulse load RthJA = f (tp) VCE = 2 V
Collector current IC = f (VBE)
Semiconductor Group
4
BC 635 ... BC 639
DC current gain hFE = f (IC) VCE = 2 V
Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10
Transition frequency fT = f (IC) VCE = 10 V, f = 20 MHz
Semiconductor Group
5
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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