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Part: BC856BWE6433
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: PNP Silicon af Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BC856BWE6433 datasheet File size : 49 kB
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Datasheet text preview:
BC856W...BC860W
PNP Silicon AF Transistors
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC846W, BC847W, BC848W BC849W, BC850W (NPN)
3
2 1
VSO05561
Type BC856AW BC856BW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW BC859AW BC859BW BC859CW BC860BW BC860CW
Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 SOT323
1
Dec-11-2001
BC856W...BC860W
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC856W BC857W BC858W Unit BC860W BC859W 65 80 80 5 45 50 50 5 100 200 200 200 250 150 -65 ... 150 mW °C 30 30 30 5 mA mA V
Thermal Resistance Junction - soldering point 1) RthJS
105
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0
BC856W BC857/860W BC858/859W
Symbol min. V(BR)CEO
Values typ. max.
Unit
V 65 45 30 -
Collector-base breakdown voltage IC = 10 µA, IE = 0
BC856W BC857/860W BC858/859W
V(BR)CBO
80 50 30
1For calculation of R thJA please refer to Application Note Thermal Resistance
2
Dec-11-2001
BC856W...BC860W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0
BC856W BC857/860W BC858/859W
Unit max. V
typ.
V(BR)CES 80 50 30 V(BR)EBO ICBO ICBO hFE hFE -group A hFE -group B hFE -group C hFE hFE -group A hFE -group B hFE -group C 125 220 420 VCEsat VBEsat VBE(ON) 600 650 750 820 700 850 75 250 300 650 180 290 520 250 475 800 140 250 480 5 15 5
Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V
nA µA -
DC current gain 1) IC = 2 mA, VCE = 5 V
Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V
mV
1) Pulse test: t =300µs, D = 2%
3
Dec-11-2001
BC856W...BC860W
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz fT Ccb Ceb h11e hFE -gr.A hFE -gr.B hFE -gr.C h12e h21e h22e 18 30 60 10 200 330 600 1.5 2 3 2.7 4.5 8.7 250 3 10 5 15 typ. max.
Unit
MHz pF
F
BC858W
Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz
F
BC859W BC860W
Vn
BC860W
-
1 1 -
4 4 0.11
4
Dec-11-2001
Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k, BC856W f = 1 kHz, f = 200 Hz BC857W
10-4
-
dB
µV
S
k
BC856W...BC860W
Total power dissipation Ptot = f (TS )
Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO)
BC 856...860 EHP00376
300
mW
C CB0 ( C EB0 )
12 pF 10
P tot
200
8
C EBO
150
6
100
4
C CBO
50
2
0 0
20
40
60
80
100
120 °C
150
0 10 -1
5
10 0
V VCB0
TS
10 1 (VEB0 )
Permissible pulse load Ptotmax / PtotDC = f (tp )
10 3 Ptot max 5 Ptot DC
tp D= T tp T
EHP00377
Transition frequency fT = f (IC) VCE = 5V
10 3 MHz
EHP00378
fT
5
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
5
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
10 1 10 -1
5 10 0
5
10 1
mA C
10 2
5
Dec-11-2001
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