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Part: BCP70ME6433
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: PNP Silicon af Power Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BCP70ME6433 datasheet File size : 162 kB
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Datasheet text preview:
BCP 70M
PNP Silicon AF Power Transistor For AF driver and output stages High collector current Low collector-emitter saturation voltage
4 5 3 2 1
VPW05980
Junction temperature Storage temperature
Thermal Resistance Junction - soldering point RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
1
Junction ambient 1)
Type BCP 70M
Marking PBs
Pin Configuration
Package
1 = E1 2 = C 3 = E2 4 = B 5 = C SCT-595
Maximum Ratings (E1 and E2 connected externaly) Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS 94 °C Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 25 25 5 3 6 200 500 1.7 150 -65 ... 150 W °C mA A Unit V
RthJA
88 33
K/W
Feb-02-2000
BCP 70M
Electrical Characteristics
at TA = 25°C, unless otherwise specified and E1 and E2 connected externaly
Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 20 V, IE = 0 Collector cutoff current VCB = 20 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V Collector-emitter saturation voltage1) IC = 2 A, IB = 0.2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz
1) Pulse test: t < 300s; D < 2%
Symbol min. V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICBO IEBO hFE
Values typ. max.
Unit
25 25 5 -
-
100 20 100
V
nA µA nA -
25 85 50
VCEsat VBEsat
0.15 -
475 0.3 1.2 V
-
fT Ccb
-
250 60
-
MHz pF
2
Feb-02-2000
BCP 70M
Total power dissipation Ptot = f (TA *;TS ) * Package mounted on epoxy
2000
mW
1600 1400
TS
P tot
1200 1000 800 600 400 200 0 0 120 °C
TA
20
40
60
80
100
150
TA ,TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 2
10 3
K/W
Ptotmax / PtotDC
-
10 1
10 2
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
-5 -4 -3 -2 0
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 -1 -6 10
10
10
10
10
s
10
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
3
Feb-02-2000
BCP 70M
DC current gain hFE = f (IC ) VCE = 2V
10 3
100°C 25°C -55°C
Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 10
10 4
mA
-
10 3
hFE
10 2
100°C 25°C -50°C
10 2
10 1 10 1
10 0 0 10
IC
1 2 3 4
10
10
10
mA 10
10 0 0.0
0.1
0.2
0.3
V
0.5
IC
VCEsat
Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10
10 4
mA
Collector current I C = f (VBE) VCE = 2V
10 4
mA
10 3
10 3
-50°C 25°C 100°C
10 2
IC
IC
10 2
-50°C 25°C 100°C
10 1
10 1
10 0 0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
10 0 0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
VBEsat
VBE
4
Feb-02-2000
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