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Part: BCR08PN
Category:
Discrete
-> Transistors
-> Bipolar
-> Bipolar Array
-> General Purpose
Description: Npn/pnp Silicon Digital Transistor Array
Company: Infineon Technologies Corporation
Datasheet: Download BCR08PN datasheet File size : 162 kB
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Datasheet text preview:
BCR08PN
NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor (R1=2.2k , R2=47k )
4 5 6
2 1
3
Tape loading orientation
Top View 654 W1s 123 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side
EHA07193
VPS05604
Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device
C1 6
B2 5
E2 4
R2 R1 TR1 R2 1 E1 2 B1 3 C2
EHA07176
TR2 R1
Type BCR08PN
Maximum Ratings Parameter
Marking WFs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 5 10 100 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point 1) RthJS
140
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BCR08PN
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Resistor ratio AC Characteristics Transition frequency I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb fT R1 /R2 Input resistor Vi(on) R1 Vi(off) VCEsat hFE IEBO ICBO V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit
50 50 70 0.4 0.5 1.5 0.042
2.2 0.047
100 164 0.3 0.8 1.1 2.9
V
nA µA V
0.052 -
-
170 2
-
MHz pF
1) Pulse test: t < 300s; D < 2%
2
Nov-29-2001
k
BCR08PN NPN Type
DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration)
10 3
Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20
10 2
mA
hFE
10 2
IC
10 1 10 1 10 0 -1 10
0 1
10
10
mA
10
2
10 0 0.0
0.1
0.2
0.3
V
0.5
IC
VCEsat
Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration)
10 1
mA
mA
10 0 10 1
IC
IC
10 -1 10 0 10 -2 10 -1 -1 10
0 1
10
10
V
10
2
10 -3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1.0
Vi(on)
Vi(off)
3
Nov-29-2001
BCR08PN PNP Type
DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration)
10 3
Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20
10 2
mA
hFE
10 2
IC
10 1 10 1 10 0 -1 10
0 1
10
10
mA
10
2
10 0 0.0
0.1
0.2
0.3
V
0.5
IC
VCEsat
Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage V i(off) = f (IC) VCE = 5V (common emitter configuration)
10 1
mA
mA
10 0 10 1
IC
IC
10 -1 10 0 10 -2 10 -1 -1 10
0 1
10
10
V
10
2
10 -3 0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
1.0
Vi(on)
Vi(off)
4
Nov-29-2001
BCR08PN
Total power dissipation Ptot = f (TS )
300
mW
P tot
200
150
100
50
0 0
20
40
60
80
100
120 °C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
Ptotmax / PtotDC
-
10 2
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Nov-29-2001
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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