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Part: BCR101
Category:
Discrete
-> Transistors
-> Bipolar
-> Audio Amplifier Application
-> NPN
Description: NPN Silicon Digital Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BCR101 datasheet File size : 162 kB
Request For quote: Find where to buy BCR101
Datasheet text preview:
BCR101...
NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1 = 100k , R2 = 100k )
BCR101F/L3 BCR101T
C 3
R1 R2
1 B
2 E
EHA07184
Type
Marking
Pin Configuration
Package
BCR101F* BCR101L3* BCR101T* *Preliminary
Maximum Ratings Parameter
UCs UC UCs
1=B 1=B 1=B
2=E 2=E 2=E
3=C 3=C 3=C
-
-
-
TSFP-3 TSLP-3-4 SC75
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 10 50 50 250 250 250
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR101F, TS 128°C BCR101L3, TS 135°C BCR101T, TS 109°C Junction temperature Storage temperature
1
mA mW
Tj Tstg
150 -65 ... 150
°C
Nov-27-2003
BCR101...
Thermal Resistance Parameter Junction - soldering point1) BCR101F BCR101L3 BCR101T Symbol RthJS Value
90 60 165
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2
50 70 0.5 1 70 0.9
-
100 1
100 3
100 75 0.3 1.8 3 130 1.1
k
Collector-base cutoff current
VCB = 40 V, IE = 0
nA µA V
Emitter-base cutoff current
VEB = 10 V, IC = 0
DC current gain2)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage2)
IC = 5 mA, IB = 0.25 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on voltage
IC = 1 mA, VCE = 0.3 V
Input resistor Resistor ratio
AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz
MHz pF
fT Ccb
1For calculation of R thJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2%
2
Nov-27-2003
BCR101...
DC current gain hFE = (IC) VCE = 5 V (common emitter configuration)
10 3
Collector-emitter saturation voltage VCEsat = (IC), hFE = 20
10 -1
A
h FE
10 -2
10 2
IC
10 -3 10 1 -4 10
-3 -2
10
10
A
10
-1
10 -4 0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
V
0.5
IC
VCEsat
Input on Voltage Vi(on) = (I C) VCE = 0.3V (common emitter configuration)
10 -1
A
Input off voltage V i(off) = (IC) VCE = 5V (common emitter configuration)
10 -2
A
10 -2
10 -3
IC
10 -3
IC
10 -4
10 -4
10 -5
10 -5 -1 10
10
0
10
1
V
10
2
10 -6 0.5
1
1.5
2
2.5
3
V
4
Vi(on)
Vi(off)
3
Nov-27-2003
BCR101...
Total power dissipation Ptot = (TS) BCR101F
300
Total power dissipation Ptot = (TS) BCR101L3
300
mW
mW
P tot
150
P tot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
Total power dissipation Ptot = (TS) BCR101T
300
Permissible Puls Load R thJS = (tp) BCR101F
10 2
mW
K/W
Ptot
200
10 1
150
100
10 0
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
50
RthJS
0 0
20
40
60
80
100
120 °C
150
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
TS
tp
4
Nov-27-2003
BCR101...
Permissible Pulse Load Ptotmax/P totDC = (tp) BCR101F
10 3 10 2
Permissible Puls Load R thJS = (tp) BCR101L3
P totmax/P totDC
10 2
RthJS
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 -1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Permissible Pulse Load Ptotmax/P totDC = (tp) BCR101L3
10 3
Permissible Puls Load R thJS = (tp) BCR101T
10 3
K/W
Ptotmax/ PtotDC
10 2
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
RthJS
10 1
10 1 10 0
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Nov-27-2003
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