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Part: BCR103
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: Digital Transistors - Npn-types Icmax up to 100 ma in TSLP-3
Company: Infineon Technologies Corporation
Datasheet: Download BCR103 datasheet File size : 162 kB
Request For quote: Find where to buy BCR103
Datasheet text preview:
BCR103...
NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1=2.2k, R2=2.2k) · For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR103/F BCR103L3/T
C 3
BCR103U
C1 6
B2 5
E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07184
1 E1
2 B1
3 C2
EHA07174
Type BCR103 BCR103F BCR103L3 BCR103T BCR103U
Marking WAs WAs WA WAs WAs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E
Pin Configuration 3=C 3=C 3=C 3=C -
Package SOT23 TSFP-3 TSLP-3-4 SC75
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1
Aug-29-2003
BCR103...
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR103, TS 102°C BCR103F, TS 128°C BCR103L3, TS 135°C BCR103T, TS 109°C BCR103U, TS 118°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR103 BCR103F BCR103L3 BCR103T BCR103U
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 10 100 200 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
240 90 60 165 133
°C
Unit K/W
2
Aug-29-2003
BCR103...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2
50 20 0.8 0.8 1.5 0.9
-
2.2 1
140 3
100 3.5 0.3 1.5 2.5 2.9 1.1
k
Collector-base cutoff current
VCB = 40 V, IE = 0
nA mA V
Emitter-base cutoff current
VEB = 10 V, IC = 0
DC current gain1)
IC = 20 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 1 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on voltage
IC = 2 mA, VCE = 0.3 V
Input resistor Resistor ratio
AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 1 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz
1Pulse test: t < 300µs; D < 2%
MHz pF
fT Ccb
3
Aug-29-2003
BCR103...
DC current gain hFE = (IC) VCE = 5V (common emitter configuration)
10 3
Collector-emitter saturation voltage VCEsat = (IC), hFE = 20
10 2
10 2
A
h FE
10 1
IC
10 1 10 0 10 -1 -4 10
-3 -2
10
10
A
10
-1
10 0 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1
IC
VCEsat
Input on Voltage Vi(on) = (I C) VCE = 0.3V (common emitter configuration)
10 -1
Input off voltage V i(off) = (IC) VCE = 5V (common emitter configuration)
10 -2
A
A
10 -3 10 -2
IC
IC
10 -4 10 -3 10 -5 10 -4 -1 10
0 1
10
10
V
10
2
10 -6 0.6
0.8
1
1.2
1.4
V
1.7
Vi(on)
Vi(off)
4
Aug-29-2003
BCR103...
Total power dissipation Ptot = (TS) BCR103
300
Total power dissipation Ptot = (TS) BCR103F
300
mW
mW
P tot
150
P tot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
Total power dissipation Ptot = (TS) BCR103L3
300
Total power dissipation Ptot = (TS) BCR103T
300
mW
mW
Ptot
150
Ptot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
5
Aug-29-2003
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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