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Part: BCR139
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: Digital Transistors - Npn-types Icmax up to 100 ma
Company: Infineon Technologies Corporation
Datasheet: Download BCR139 datasheet File size : 162 kB
Request For quote: Find where to buy BCR139
Datasheet text preview:
BCR139...
NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1=22k)
BCR139/F/L3 BCR139T
C 3
R1
1 B
2 E
EHA07264
Type
Marking
Pin Configuration
Package
BCR139 BCR139F BCR139L3 BCR139T
WYs WYs WY WYs
1=B 1=B 1=B 1=B
2=E 2=E 2=E 2=E
3=C 3=C 3=C 3=C
-
-
-
SOT23 TSFP-3 TSLP-3-4 SC75
1
Sep-03-2003
BCR139...
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR139, TS 102°C BCR139F, TS 128°C BCR139L3, TS 135°C BCR139T, TS 109°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR139 BCR139F BCR139L3 BCR139T
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 30 100 200 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
240 90 60 165
°C
Unit K/W
2
Sep-03-2003
BCR139...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1
50 5 120 0.4 0.5 15
22
100 630 0.3 0.8 1.1 29
k
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 40 V, IE = 0
nA V
DC current gain1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
1Pulse test: t < 300µs; D < 2%
AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 150 MHz
3
Sep-03-2003
BCR139...
DC current gain hFE = (IC) VCE = 5V (common emitter configuration)
10 3
Collector-emitter saturation voltage VCEsat= (IC), hFE = 20
10 -1
A
h FE
10 -2
10 2
IC
10 -3 10 1 -4 10
-3 -2
10
10
A
10
-1
10 -4 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1
IC
VCEsat
Input on Voltage Vi(on) = (I C) VCE = 0.3V (common emitter configuration)
10 -1
Input off voltage V i(off) = (IC) VCE = 5V (common emitter configuration)
10 -2
A
A
10 -3 10 -2
IC
IC
10 -4 10 -3 10 -5 10 -4 -1 10
0 1
10
10
V
10
2
10 -6 0
0.5
1
1.5
2
V
3
Vi(on)
Vi(off)
4
Sep-03-2003
BCR139...
Total power dissipation Ptot = (TS) BCR139
300
Total power dissipation Ptot = (TS) BCR139F
300
mW
mW
P tot
150
P tot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
Total power dissipation Ptot = (TS) BCR139L3
300
Total power dissipation Ptot = (TS) BCR139T
300
mW
mW
Ptot
150
Ptot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
5
Sep-03-2003
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