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Part: BCR139U
Category:
Discrete
-> Transistors
-> Bipolar
Description: Complex af Transistors With Built-in Resistor Networks
Company: Infineon Technologies Corporation
Datasheet: Download BCR139U datasheet File size : 162 kB
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Datasheet text preview:
BCR139
NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=22k )
C 3
3
Thermal Resistance
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Junction - soldering point 1)
2 1
VPS05161
R1
1 B
2 E
EHA07264
Type BCR139
Maximum Ratings Parameter
Marking WYs 1=B
Pin Configuration 2=E 3=C
Package SOT23
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 5 30 100 200 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102 °C Junction temperature Storage temperature
mA mW °C
RthJS
240
K/W
Jul-13-2001
BCR139
Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 fT 150 Input resistor Vi(on) R1 0.5 15 22 1.1 29 Vi(off) 0.4 0.8 VCEsat 0.3 hFE 120 630 ICBO 100 V(BR)EBO 5 V(BR)CBO 50 V(BR)CEO 50 typ. max.
Unit
V
V nA V V
MHz pF
1) Pulse test: t < 300s; D < 2%
2
Jul-13-2001
k
BCR139
DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration)
10 3
Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20
10 -1
A
hFE
10 -2
10 2
IC
10 -3 10 1 -4 10
-3 -2
10
10
A
10
-1
10 -4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1.0
IC
VCEsat
Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration)
10 -1
Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration)
10 -2
A
A
10 -3 10 -2
IC
IC
10 -4 10 -3 10 -5 10 -4 -1 10
0 1
10
10
V
10
2
10 -6 0.0
0.5
1.0
1.5
2.0
V
3.0
Vi(on)
Vi(off)
3
Jul-13-2001
BCR139
Total power dissipation Ptot = f (TS )
300
mW
Ptot
200
150
100
50
0 0
20
40
60
80
100
120 °C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
Ptotmax / PtotDC
-
10 2
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
4
Jul-13-2001
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
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