|
|
Part: BCR141SE6327
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: NPN Silicon Digital Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BCR141SE6327 datasheet File size : 162 kB
Request For quote: Find where to buy BCR141SE6327
Datasheet text preview:
BCR141S
NPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package Built in bias resistor (R1=22k , R2=22k )
C1 6 B2 5 E2 4
4 5 6
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
2 1
3
VPS05604
R2 R1 TR1 R2 1 E1 2 B1 3 C2
EHA07174
TR2 R1
Type BCR141S
Maximum Ratings Parameter
Marking WDs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
RthJS
Value 50 50 10 30 100 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature
Thermal Resistance
mA mW °C
Junction - soldering point 1)
140
K/W
Jul-12-2001
BCR141S
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Resistor ratio R1 /R2 0.9 1 1.1 Input resistor Vi(on) R1 1 15 22 2.5 29 Vi(off) 0.8 1.5 VCEsat 0.3 hFE 50 IEBO 350 ICBO 100 V(BR)EBO V(BR)CBO 50 V(BR)CEO 50 typ. max.
Unit
V
nA µA V V V k -
AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 130 MHz
1) Pulse test: t < 300s; D < 2%
2
Jul-12-2001
BCR141S
DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration)
10 3
Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20
10 2
mA
hFE
10 2
IC
10 1 10 1 10 0 -1 10
0 1
10
10
mA
10
2
10 0 0.0
0.2
0.4
0.6
V
1.0
IC
VCEsat
Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration)
10 1
mA
mA
10 0 10 1
IC
IC
10 -1 10 0 10 -2 10 -1 -1 10
0 1
10
10
V
10
2
10 -3 0.0
0.5
1.0
1.5
2.0
V
3.0
Vi(on)
Vi(off)
3
Jul-12-2001
BCR141S
Total power dissipation Ptot = f (TS )
300
mW
P tot
200
150
100
50
0 0
20
40
60
80
100
120 °C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
Ptotmax / PtotDC
-
10 2
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
4
Jul-12-2001
Others parts begin by bc
BC-1 BC-2 BC-3 BC-4 BC-5 BC-6 BC-7 BC-8 BC-9 BC-10 BC-11 BC-12 BC-13 BC-14 BC-15 BC-16 BC-17 BC-18 BC-19 BC-20 BC-21 BC-22 BC-23
|
|
|
