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Part: BCR142F
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: Digital Transistors - Npn-types Icmax up to 100 ma
Company: Infineon Technologies Corporation
Datasheet: Download BCR142F datasheet File size : 162 kB
Request For quote: Find where to buy BCR142F
Datasheet text preview:
BCR142...
NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1=22k, R2 =47k)
BCR142/F/L3 BCR142T/W
C 3
R1 R2
1 B
2 E
EHA07184
Type BCR142 BCR142F BCR142FL3 BCR142T BCR142W
Marking WZs WZs WZ WZs WZs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E
Pin Configuration 3=C 3=C 3=C 3=C 3=C -
Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1
Aug-29-2003
BCR142...
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR142, TS 102°C BCR142F, TS 128°C BCR142L3, TS 135°C BCR142T, TS 109°C BCR142W, TS 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR142 BCR142F BCR142L3 BCR142T BCR142W
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 10 30 100 200 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
240 90 60 165 105
°C
Unit K/W
2
Aug-29-2003
BCR142...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2
50 70 0.5 0.8 15 0.42
-
22 0.47
150 3
100 227 0.3 1.2 2.5 29 0.52
k
Collector-base cutoff current
VCB = 40 V, IE = 0
nA µA V
Emitter-base cutoff current
VEB = 10 V, IC = 0
DC current gain-1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on voltage
IC = 2 mA, VCE = 0.3 V
Input resistor Resistor ratio
AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz
1Pulse test: t < 300µs; D < 2%
MHz pF
fT Ccb
3
Aug-29-2003
BCR142...
DC current gain hFE = (IC) VCE = 5V (common emitter configuration)
10 3
Collector-emitter saturation voltage VCEsat = (IC), hFE = 20
10 2
mA
h FE
10 2
IC
10 1 10 1 10 0 -1 10
0 1
10
10
mA
10
2
10 0 0
0.2
0.4
0.6
V
1
IC
VCEsat
Input on Voltage Vi(on) = (I C) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage V i(off) = (IC) VCE = 5V (common emitter configuration)
10 1
mA
mA
10 0 10 1
IC
IC
10 -1 10 0 10 -2 10 -1 -1 10
0 1
10
10
V
10
2
10 -3 0
0.5
1
1.5
V
2.5
Vi(on)
Vi(off)
4
Aug-29-2003
BCR142...
Total power dissipation Ptot = (TS) BCR142
300
Total power dissipation Ptot = (TS) BCR142F
300
mW
mW
P tot
150
P tot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
Total power dissipation Ptot = (TS) BCR142L3
300
Total power dissipation Ptot = (TS) BCR142T
300
mW
mW
Ptot
150
Ptot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
5
Aug-29-2003
Others parts begin by bc
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