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Part: BCR185S
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: PNP Silicon Digital Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BCR185S datasheet File size : 162 kB
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Datasheet text preview:
BCR185.../SEMB9
PNP Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1 = 10k , R2 = 47k ) · For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR185/F/L3 BCR185T/W
C 3
BCR185S/U SEMB9
C1 6 B2 5 E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07183
1 E1
2 B1
3 C2
EHA07173
Type
Marking
Pin Configuration
Package
BCR185 BCR185F BCR185L3 BCR185S BCR185T BCR185U BCR185W SEMB9
WNs WNs WN WNs WNs WNs WNs WN
1=B 1=B 1=B 1=B 1=B
2=E 2=E 2=E 2=E 2=E
3=C 3=C 3=C 3=C 3=C
-
-
-
SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
Jun-14-2004
BCR185.../SEMB9
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR185 TS 102°C BCR185F, TS 128°C BCR185L3, TS 135°C BCR185S, T S 115°C BCR185T, TS 109°C BCR185U, TS 118°C BCR185W, TS 124°C SEMB9, TS 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR185 BCR185F BCR185L3 BCR185S BCR185T BCR185U BCR185W SEMB9
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 6 20 100 200 250 250 250 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
240 90 60 140 165 133 105 300
°C
Unit K/W
2
Jun-14-2004
BCR185.../SEMB9
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2
50 70 0,5 0,5 7 0,19
10 0,21
100 167 0,3 1 1,4 13 0,24
k
Collector-base cutoff current
VCB = 40 V, IE = 0
nA µA V
Emitter-base cutoff current
VEB = 6 V, IC = 0
DC current gain1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0,5 mA
Input off voltage
IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0,3 V
Input resistor Resistor ratio
-
AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz
1Pulse test: t < 300µs; D < 2%
fT Ccb
-
200 3
-
MHz pF
3
Jun-14-2004
BCR185.../SEMB9
DC current gain hFE = (IC) VCE = 5 V (common emitter configuration)
10 3
Collector-emitter saturation voltage VCEsat = (IC), hFE = 20
10 2
mA
h FE
10 2
IC
10 1 10 1 10 0 -1 10
0 1
10
10
mA
10
2
10 0 0
0.2
0.4
0.6
V
1
IC
VCEsat
Input on Voltage Vi(on) = (I C) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage V i(off) = (IC) VCE = 5V (common emitter configuration)
10 1
mA
mA
10 0 10 1
IC
IC
10 -1 10 0 10 -2 10 -1 -1 10
0 1
10
10
V
10
2
10 -3 0
0.5
1
V
2
Vi(on)
Vi(off)
4
Jun-14-2004
BCR185.../SEMB9
Total power dissipation Ptot = (TS) BCR185
300
Total power dissipation Ptot = (TS) BCR185F
300
mW
mW
P tot
150
P tot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
Total power dissipation Ptot = (TS) BCR185L3
300
Total power dissipation Ptot = (TS) BCR185S
300
mW
mW
Ptot
150
Ptot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
5
Jun-14-2004
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