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Part: BCR191L3
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: PNP Silicon Digital Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BCR191L3 datasheet File size : 162 kB
Request For quote: Find where to buy BCR191L3
Datasheet text preview:
BCR191.../SEMB1
PNP Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver circuit · Built in bias resistor (R1 = 22k , R2 = 22k ) · For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR191/F/L3 BCR191T/W
C 3
BCR191S SEMB1
C1 6 B2 5 E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07183
1 E1
2 B1
3 C2
EHA07173
Type
Marking
Pin Configuration
Package
BCR191 BCR191F BCR191L3 BCR191S BCR191T BCR191W SEMB1
WOs WOs WO WOs WOs WOs WO
1=B 1=B 1=B 1=B 1=B
2=E 2=E 2=E 2=E 2=E
3=C 3=C 3=C 3=C 3=C
-
-
-
SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B2 3=C2 4=E2 5=B2 6=C1 SOT666
1
May-18-2004
BCR191.../SEMB1
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR191, TS 102°C BCR191F, TS 128°C BCR191L3, TS 135°C BCR191S, T S 115°C BCR191T, TS 109°C BCR191W, TS 124°C SEMB1, TS 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR191 BCR191F BCR191L3 BCR191S BCR191T BCR191W SEMB1
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 10 30 100 200 250 250 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 150 ... -65 Value
240 90 60 140 165 105 300
°C
Unit K/W
2
May-18-2004
BCR191.../SEMB1
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2
50 50 0,8 1 15 0,9
22 1
100 350 0,3 1,5 2,5 29 1,1
k
Collector-base cutoff current
VCB = 40 V, IE = 0
nA µA V
Emitter-base cutoff current
VEB = 10 V, IC = 0
DC current gain1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0,5 mA
Input off voltage
IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0,3 V
Input resistor Resistor ratio
-
AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz
1Pulse test: t < 300µs; D < 2%
fT Ccb
-
200 3
-
MHz pF
3
May-18-2004
BCR191.../SEMB1
DC current gain hFE = (IC) VCE = 5 V (common emitter configuration)
10 3
Collector-emitter saturation voltage VCEsat = (IC), hFE = 20
10 2
mA
h FE
10 2
IC
10 1 10 1 10 0 -1 10
0 1
10
10
mA
10
2
10 0 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1
IC
VCEsat
Input on Voltage Vi(on) = (I C) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage V i(off) = (IC) VCE = 5V (common emitter configuration)
10 1
mA
mA
10 1
10 0
IC
10 0
IC
10 -1 10 -1 -1 10
0 1
10
10
V
10
2
10 -2 0
0.5
1
1.5
2
V
3
Vi(on)
Vi(off)
4
May-18-2004
BCR191.../SEMB1
Total power dissipation Ptot = (TS) BCR191
300
Total power dissipation Ptot = (TS) BCR191F
300
mW
mW
P tot
150
P tot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
Total power dissipation Ptot = (TS) BCR191L3
300
Total power dissipation Ptot = (TS) BCR191S
300
mW
mW
Ptot
150
Ptot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
5
May-18-2004
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