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Part: BCW67CE6433
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: Single af Transistors For General Purpose Applications
Company: Infineon Technologies Corporation
Datasheet: Download BCW67CE6433 datasheet File size : 265 kB
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Datasheet text preview:
BCW67, BCW68
PNP Silicon AF Transistors For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW65, BCW66 (NPN)
3
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
2 1
VPS05161
Type BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H
Maximum Ratings Parameter
Marking DAs DBs DCs DFs DGs DHs 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
Symbol VCEO VCBO VEBO
BCW67 32 45 5 800 1 100 200 330 150
BCW68 45 60 5
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature
Thermal Resistance
IC ICM IB IBM Ptot Tj Tstg
RthJS
mA A mA mW °C
-65 ... 150 215 K/W
Junction - soldering point1)
Jul-10-2001
BCW67, BCW68
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C VCB = 45 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H DC current gain 1) IC = 10 mA, VCE = 1 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H DC current gain 1) IC = 100 mA, VCE = 1 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H
1) Pulse test: t 300µs, D = 2%
Unit max. V
typ.
V(BR)CEO BCW67 BCW68 V(BR)CBO BCW67 BCW68 V(BR)EBO ICBO BCW67 BCW68 ICBO BCW67 BCW68 IEBO hFE 35 50 80 hFE 75 120 180 hFE 100 160 250 160 250 350 250 400 630 20 20 20 20 20 45 60 5 32 45 -
nA
µA
nA -
2
Jul-10-2001
BCW67, BCW68
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics DC current gain 1) IC = 500 mA, VCE = 2 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 6 pF fT 200 MHz VBEsat 1.25 2 VCEsat 0.3 0.7 hFE 35 60 100 V Symbol min. Values typ. max. Unit
3
Jul-10-2001
BCW67, BCW68
Total power dissipation Ptot = f(TS)
Transition frequency fT = f (IC) VCE = 5V
360
10 3 MHz
BCW 67/68
EHP00398
mW
300 270
fT
5
P tot
240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120
10 2
5
°C 150 TS
10 1 10 0
5 10 1
5
10 2
mA 10 3
C
Permissible pulse load Ptotmax / PtotDC = f (tp )
10 3 Ptot max 5 Ptot DC
BCW 67/68 EHP00399
Collector cutoff current ICBO = f (T A) VCB = V CEmax
10 5 nA
BCW 67/68 EHP00400
tp D= T
tp T
CB0
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 4 5
10 5
2
10 3 5 10 2 5
max
10 5
1
typ 10
1
5 10 0 10 -6 10 0
10
-5
10
-4
10
-3
10
-2
s tp
10
0
0
50
100
°C TA
150
4
Jul-10-2001
BCW67, BCW68
Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10
10 3 mA
BCW 67/68 EHP00401
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10
10 3 mA
BCW 67/68 EHP00402
C
10 2 5
150 °C 25 °C -50 °C
C
10 2 5
150 °C 25 °C -50 °C
10 1 5
10 1 5
10
0
10 5
0
5
10 -1
0
1
2
3
V
4
10 -1 0
200
400
600 mV 800 VCE sat
VBE sat
DC current gain hFE = f (IC ) VCE = 1V
10 3 5
BCW 67/68 EHP00403
100 °C 25 °C
h FE
10 2 -50 °C 5
10 1 5
10 0 10 -1
5 10 0
5 10 1
5 10 2
mA 10 3
C
5
Jul-10-2001
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