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Part: BCX71KE6433
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: Single af Transistors For General Purpose Applications
Company: Infineon Technologies Corporation
Datasheet: Download BCX71KE6433 datasheet File size : 326 kB
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Datasheet text preview:
BCW61, BCX71
PNP Silicon AF Transistor
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN)
3
2 1
VPS05161
Type BCW 61A BCW 61B BCW 61C BCW 61D BCW 61FF BCW 61FN BCX 71G BCX 71H BCX 71J BCX 71K
Marking BAs BBs BCs BDs BFs BNs BGs BHs BJs BKs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
1
Jul-10-2001
BCW61, BCX71
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Peak base current Total power dissipation, TS = 71 °C Junction temperature Storage temperature
Thermal Resistance
Symbol VCEO VCBO VEBO
IC ICM IBM Ptot Tj Tstg
RthJS
BCW61 BCW61FF 32 32 5 32 32 5
100 200 200 330 150 -65 ... 150
BCX71 Unit 45 45 5
mA mA mW °C
V
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0
1For calculation of R thJA please refer to Application Note Thermal Resistance
V(BR)CEO 32 45 V(BR)CBO 32 45 V(BR)EBO 5 -
BCW61/61FF BCX71
BCW61/61FF BCX71
2
Junction - soldering point1)
240
K/W
Unit max. V
typ.
Jul-10-2001
BCW61, BCX71
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C BCW61/61FF VCB = 45 V, IE = 0 , TA = 150 °C BCX71 Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 µA, VCE = 5 V
hFE-grp. A/G hFE-grp. B/H hFE-grp. C/J/FF hFE-grp. D/K/FN BCW61/61FF BCX71
Unit max. nA
typ.
ICBO ICBO IEBO hFE 20 30 40 100 hFE
hFE-grp. A/G hFE-grp. B/H hFE-grp. C/J/FF hFE-grp. D/K/FN
-
20 20 µA 20 20 20 nA -
-
140 200 300 460 170 250 350 500 -
220 310 460 630 -
DC current gain 1) IC = 2 mA, VCE = 5 V
120 180 250 380 hFE 60 80 100 110
DC current gain 1) IC = 50 mA, VCE = 1 V
hFE-grp. A/G hFE-grp. B/H hFE-grp. C/J/FF hFE-grp. D/K/FN
1) Pulse test: t =300µs, D = 2%
3
Jul-10-2001
BCW61, BCX71
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Characteristics Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter voltage 1) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 50 mA, VCE = 1 V
AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz IC = 2 mA, VCE = 5 V, f = 1 kHz 2.7 3.6 4.5 7.5 1.5 2 2 3 10-4 Short-circuit input impedance Ceb
hFE-grp. h11e A/G B/H C/J/FF D/K/FN
Symbol min. VCEsat VBEsat VBE(ON) 0.55 -
Values typ. max.
Unit
V 0.12 0.2 0.7 0.83 0.52 0.65 0.78 0.25 0.55 0.85 1.05 0.75 -
fT Ccb
-
250 3 8
-
MHz pF
Open-circuit reverse voltage transf.ratio hFE-grp. h12e IC = 2 mA, VCE = 5 V, f = 1 kHz A/G
B/H C/J/FF D/K/FN
1) Pulse test: t =300µs, D = 2%
4
Jul-10-2001
k
BCW61, BCX71
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics typ. max.
Unit
Short-circuit forward current transf.ratio hFE-grp. h21e A/G IC = 2 mA, VCE = 5 V, f = 1 kHz
B/H C/J/FF D/K/FN
200 260 330 520 18 24 30 50 S dB 2 1 2 0.11 µV
IC = 2 mA, VCE = 5 V, f = 1 kHz
B/H C/J/FF D/K/FN
Noise figure IC = 200 µA, VCE = 5 V, RS = 1 k, f = 1 kHz, f = 200 Hz
hFE-grp. F A/K FF/FN hFE-grp. Vn FF/FN
Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz
5
Jul-10-2001
Open-circuit output admittance
hFE-grp. h22e A/G
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