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Part: BDP950
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: PNP Silicon af Power Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BDP950 datasheet File size : 261 kB
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Datasheet text preview:
BDP948, BDP950
PNP Silicon AF Power Transistors For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP947, BDP949 (NPN)
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
4
3 2 1
VPS05163
Type BDP948 BDP950
Maximum Ratings Parameter
Marking BDP 948 BDP 950 1=B 1=B
Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C
Package SOT223 SOT223
Symbol VCEO VCBO VEBO
BDP948 45 45 5 3 5 200 500 3 150
BDP950 60 60 5
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99 °C Junction temperature Storage temperature
Thermal Resistance
IC ICM IB IBM Ptot Tj Tstg
RthJS
A mA W °C
-65 ... 150
Junction - soldering point1)
17
K/W
Jul-06-2001
BDP948, BDP950
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 45 V, IE = 0 Collector cutoff current VCB = 45 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 1 A, VCE = 2 V Collector-emitter saturation voltage1) IC = 2 A, IB = 0.2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 40 fT 100 VBEsat 1.3 VCEsat hFE 25 85 50 475 0.5 IEBO 100 ICBO 20 ICBO 100 BDP948 BDP950 V(BR)EBO BDP948 BDP950 V(BR)CBO 45 60 5 V(BR)CEO 45 60 typ. max.
Unit
V
-
nA µA nA -
V
MHz pF
1) Pulse test: t =300µs, D = 2%
2
Jul-06-2001
BDP948, BDP950
Total power dissipation Ptot = f (TS )
Permissible Pulse Load RthJS = f (tp)
3.2
W
10 3
K/W
10 2 2.4
P tot
2
RthJS
10 1
1.6 10 0
1.2
0.8
10 -1
0.4 10 -2 -6 10
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
0 0
20
40
60
80
100
120 °C
150
10
-5
10
-4
10
-3
10
-2
s
10
0
TS
tp
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 3
DC current gain hFE = f (IC) VCE = 2V
10 3
Ptotmax / PtotDC
-
-
100°C 25°C
10 1
hFE
10 2
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
-50°C
10 1
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 0 10
10
1
10
2
10
3
mA 10
4
tp
IC
3
Jul-06-2001
BDP948, BDP950
Collector cutoff current ICBO = f (TA ) VCB = 45V
10 5
nA
Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 10
10 4
mA
10 4 10 3
ICBO
10 3
IC
max
10
2
10
2
100°C 25°C -50°C
10 1
typ
10 1
10 0
10 -1 0
20
40
60
80
100
120 °C
150
10 0 0.0
0.1
0.2
0.3
0.4
V
0.6
TA
VCEsat
Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10
10 4
mA
Collector current I C = f (VBE) VCE = 2V
10 4
mA
10 3
10 3
10 2
-50°C 25°C 100°C
-50°C 25°C 100°C
10 2
IC
10 1
IC
10 1 10 0 0.0
10 0 0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
0.2
0.4
0.6
0.8
1.0
V
1.3
VBEsat
VBE
4
Jul-06-2001
Others parts begin by bd
BD-1 BD-2 BD-3 BD-4 BD-5 BD-6 BD-7 BD-8 BD-9 BD-10 BD-11 BD-12 BD-13
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