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Part: BDP952E6327
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: PNP Silicon af Power Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BDP952E6327 datasheet File size : 261 kB
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Datasheet text preview:
BDP952...BDP956
PNP Silicon AF Power Transistors For AF driver and output stages High current gain Low collector-emitter saturation voltage Complementary types: BDP951...BDP955 (NPN)
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
4
3 2 1
VPS05163
Type BDP952 BDP954 BDP956
Maximum Ratings Parameter
Marking BDP 952 BDP 954 BDP 956 1=B 1=B 1=B
Pin Configuration 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C
Package SOT223 SOT223 SOT223
Symbol VCEO VCBO VEBO
BDP952 80 100 5
BDP954 100 120 5
BDP956 Unit 120 140 5 V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 99 °C Junction temperature Storage temperature
Thermal Resistance
IC ICM IB IBM Ptot Tj Tstg
RthJS
3 5 200 500 3 150 -65 ... 150 17
A mA W °C
Junction - soldering point1)
K/W
Jul-06-2001
BDP952...BDP956
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BDP952 BDP954 BDP956 Collector-base breakdown voltage IC = 100 µA, IB = 0 BDP952 BDP954 BDP956 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 100 V, IE = 0 Collector cutoff current VCB = 100 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 500 mA, VCE = 1 V IC = 2 A, VCE = 2 V Collector-emitter saturation voltage1) IC = 2 A, IB = 0.2 A Base-emitter saturation voltage 1) IC = 2 A, IB = 0.2 A VBEsat 1.5 VCEsat hFE 25 40 15 475 0.8 IEBO 100 ICBO 20 ICBO 100 V(BR)EBO V(BR)CBO 100 120 140 5 V(BR)CEO 80 100 120 typ. max.
Unit
V
nA µA nA -
V
AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz
1) Pulse test: t =300µs, D = 2%
fT Ccb
-
100 40
-
MHz pF
2
Jul-06-2001
BDP952...BDP956
Total power dissipation Ptot = f (TS )
Permissible Pulse Load RthJS = f (tp)
3.2
W
10 3
K/W
10 2 2.4
P tot
2
RthJS
10 1
1.6 10 0
1.2
0.8
10 -1
0.4 10 -2 -6 10
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
0 0
20
40
60
80
100
120 °C
150
10
-5
10
-4
10
-3
10
-2
s
10
0
TS
tp
Permissible Pulse Load
DC current gain hFE = f (IC)
Ptotmax / PtotDC = f (tp)
10 3
VCE = 2V
10 3
Ptotmax / PtotDC
100°C 25°C -50°C
hFE
10 2
-2 0
10 2
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
10 0 -6 10
10
-5
10
-4
10
-3
10
s
10
10 1 0 10
10
1
10
2
10
3
mA 10
4
tp
IC
3
Jul-06-2001
BDP952...BDP956
Collector cutoff current ICBO = f (TA )
Collector-emitter saturation voltage
VCB = 45V
10 5
nA
IC = f (VCEsat), hFE = 10
10 4
mA
10 4 10 3
ICBO
10 3
IC
max
10
2
10
2
100°C 25°C -50°C
10 1
typ
10 1
10 0
10 -1 0
20
40
60
80
100
120 °C
150
10 0 0.0
0.1
0.2
0.3
0.4
0.5
0.6
V
0.8
TA
VCEsat
Base-emitter saturation voltage
Collector current I C = f (VBE)
IC = f (VBEsat ), hFE = 10
10 4
mA
VCE = 2V
10 4
mA
10 3
10 3
10 2
-50°C 25°C 100°C
IC
IC
10 2
-50°C 25°C 100°C
10 1
10 1
10 0 0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
10 0 0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
VBEsat
VBE
4
Jul-06-2001
Others parts begin by bd
BD-1 BD-2 BD-3 BD-4 BD-5 BD-6 BD-7 BD-8 BD-9 BD-10 BD-11 BD-12 BD-13
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