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Part: BF770AE6433
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: PNP Silicon High-voltage Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BF770AE6433 datasheet File size : 44 kB
Request For quote: Find where to buy BF770AE6433
Datasheet text preview:
BF 770A
NPN Silicon RF Transistor For IF amplifiers in TV-sat tuners and for VCR modulators
3
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point RthJS
1T is measured on the collector lead at the soldering point to the pcb S
2 1
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF 770A
Maximum Ratings Parameter
Marking LSs 1=B
Pin Configuration 2=E 3=C
Package SOT-23
Symbol VCEO VCES VCBO VEBO IC IB 63 °C F) Ptot Tj TA Tstg
Value 12 20 20 2 50 6 300 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS
mA mW °C
290
K/W
1
Oct-26-1999
BF 770A
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 10 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Oct-26-1999
BF 770A
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling)
Transition frequency IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F Ceb Cce Ccb fT
Symbol min. 4.5 -
Values typ. 6 0.58 0.23 1.7 max. 0.9 -
Unit
GHz pF
dB 2 3.3 -
Power gain, maximum available 1)
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
Gma
|S21e|2
13.5 8.5
-
-
12 6.5
-
1G ma
= |S21 / S12 | (k-(k2-1)1/2) 3 Oct-26-1999
Others parts begin by bf
BF-1 BF-2 BF-3 BF-4 BF-5 BF-6 BF-7 BF-8
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