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Part: BF772E6327
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: NPN Silicon RF Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BF772E6327 datasheet File size : 44 kB
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Datasheet text preview:
BF772
NPN Silicon RF Transistor For application in TV-sat tuners
3 4 2 1
VPS05178
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point 2) RthJS
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF772
Maximum Ratings Parameter
Marking RAs 1=C
Pin Configuration 2=E 3=B 4=E
Package SOT143
Unit V
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 80 10 580 150 -65 ... 150 -65 ... 150
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 72 °C 1)
mA mW °C
135
K/W
1
Jun-27-2001
BF772
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Jun-27-2001
BF772
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz |S21e|2 14.5 8.5 Gma 17.5 11.5 F 1.3 2.1 Ceb 1.8 Cce 0.25 Ccb 0.6 0.9 fT 6 8 typ. max.
Unit
GHz pF
dB
1G ma
= |S21 / S12 | (k-(k2-1)1/2 )
3
Jun-27-2001
Others parts begin by bf
BF-1 BF-2 BF-3 BF-4 BF-5 BF-6 BF-7 BF-8
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