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Part: BF775

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> RF
             -> Amplifier

Description: NPN Silicon RF Transistor

Company: Infineon Technologies Corporation

Datasheet: Download BF775 datasheet     File size : 44 kB

Request For quote: Find where to buy BF775



Datasheet text preview:
BF 775
NPN Silicon RF Transistor Especially suitable for TV-Sat and UHF tuners

3

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type BF 775
Maximum Ratings Parameter

Junction temperature Ambient temperature Storage temperature
Thermal Resistance Parameter

1T S

is measured on the collector lead at the soldering point to the pcb
1 Nov-30-2000



Junction - soldering point





2 1
VPS05161

Marking LOs

Pin Configuration 1=B 2=E
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS

3=C

Package SOT-23

Value

Unit

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation
TS 48°C1)

15 20 20 2.5 30 4 280 150 -65 ... 150 -65 ... 150

V

mA mW °C

Value

Unit

365

K/W

BF 775

Electrical Characteristics Parameter Characteristics Symbol min. Values typ. max. Unit

Collector-emitter breakdown voltage
IC = 1 mA, IB = 0

V(BR)CEO ICES ICBO IEBO hFE

15 40

100

10 100 100 200

V µA nA µA -

Collector-emitter cutoff current
VCE = 20 V, VBE = 0

Collector -base cutoff current
VCB = 10 V, IE = 0

Emitter-base cutoff current
VEB = 2.5 V, IC = 0

DC current gain
IC = 10 mA, VCE = 8 V

2

Nov-30-2000

BF 775

Electrical Characteristics Parameter AC Characteristics Symbol min. Values typ. max. Unit

Transition frequency
IC = 10 mA, VCE = 8 V, f = 500 MHz

fT Ccb Cce Ceb F

3.5 -

5.5 0.38 0.2 0.5

0.6 -

GHz pF

Collector-base capacitance
VCB = 10 V, f = 1 MHz

Collector emitter capacitance
VCE = 10 V, f = 1 MHz

Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz

Noise figure
IC = 2 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz f = 1.8 GHz

dB 1 1.6 -

Power gain, maximum available1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz f = 1.8 GHz

Gma

|S21e|2 -

16 10.5

-

Transducer gain
IC = 10 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz f = 1.8 GHz

13 7.5

-

1G ma

= |S21 /S12| (k-(k2 -1)1/2 ) 3 Nov-30-2000




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