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Part: BF775AE6327
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: NPN Silicon RF Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BF775AE6327 datasheet File size : 44 kB
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Datasheet text preview:
BF 775A
NPN Silicon RF Transistor · Especially suitable for amplifiers and TV-sat tuners
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775A LGs Q62702-F1250 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 16 25 25 2 30 4 mW 280 150 - 65 ... + 150 - 65 ... + 150 325 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg
1)
TS 59 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-12-1996
BF 775A
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
16 120 -
V µA 100 nA 100 µA 10 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 25 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 15 mA, VCE = 8 V
Semiconductor Group
2
Dec-12-1996
BF 775A
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
4.5 5.8 0.39 0.19 0.9 -
GHz pF 0.6 dB 1.45 2.2 -
IC = 15 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)
G ma
IC = 15 mA, VCE = 8 V, ZS = ZSopt Z L = Z Lopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 13 7.5 16 10.5 -
IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-12-1996
Others parts begin by bf
BF-1 BF-2 BF-3 BF-4 BF-5 BF-6 BF-7 BF-8
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