Digchip : Database on electronics components
 
Member, Distributor  
Log In
Email:
Password:


Part: BF775WE6327

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> RF

Description: NPN Silicon RF Transistor

Company: Infineon Technologies Corporation

Datasheet: Download BF775WE6327 datasheet     File size : 44 kB

Request For quote: Find where to buy BF775WE6327



Datasheet text preview:
BF 775W
NPN Silicon RF Transistor Especially suitable for TV-sat and UHF tuners

3

Junction temperature Ambient temperature Storage temperature

Thermal Resistance Junction - soldering point RthJS

1T is measured on the collector lead at the soldering point to the pcb S





2 1
VSO05561

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type BF 775W
Maximum Ratings Parameter

Marking LOs 1=B

Pin Configuration 2=E 3=C

Package SOT-323

Symbol VCEO VCES VCBO VEBO IC IB 86 °C F) Ptot Tj TA Tstg

Value 15 20 20 2.5 30 4 280 150 -65 ... 150 -65 ... 150

Unit V

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS

mA mW °C

230

K/W

1

Oct-26-1999

BF 775W

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 40 100 200 IEBO 100 µA ICBO 100 nA ICES 10 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit

2

Oct-26-1999

BF 775W

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling)
Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 6 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F Ceb Cce Ccb fT

Symbol min. 3.5 -

Values typ. 5 0.43 0.25 0.7 max. 0.6 -

Unit

GHz pF

dB 1.8 2.9 -

Power gain, maximum available 1)
IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz

Gma

|S21e|2

15.5 10

-

-

13 7.5

-

1G ma

= |S21 / S12 | (k-(k2-1)1/2) 3 Oct-26-1999




Others parts begin by bf
BF-1   BF-2   BF-3   BF-4   BF-5   BF-6   BF-7   BF-8