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Part: BF799
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
-> Amplifier
Description: NPN Silicon RF Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BF799 datasheet File size : 131 kB
Request For quote: Find where to buy BF799
Datasheet text preview:
BF799
NPN Silicon RF Transistor For linear broadband amplifier application up to 500 MHz SAW filter driver in TV tuners
3
Junction temperature Storage temperature Thermal Resistance
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
1
Junction - soldering point2)
2 1
VPS05161
Type BF799
Maximum Ratings Parameter
Marking LKs 1=B
Pin Configuration 2=E 3=C
Package SOT23
Symbol VCEO VCES VCBO VEBO IC ICM IBM Ptot Tj Tstg
Value
Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, Peak base current Total power dissipation TS
20 30 30 3 35 50 15 280 150 -65 ... 150
V
mA
mW °C
69 °C 1)
RthJS
290
K/W
Apr-15-2003
BF799
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Base-emitter breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 20 V, IE = 0 DC current gain IC = 5 mA, VCE = 10 V IC = 20 mA, VCE = 10 V Collector-emitter saturation voltage IC = 20 mA, IB = 2 mA Base-emitter saturation voltage IC = 20 mA, IB = 2 mA VBEsat VCEsat hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max.
Unit
20 30 3 -
-
100
V
nA -
35 40 -
95 100 0.1 -
250 0.3 0.95 V
AC characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz IC = 20 mA, VCE = 8 V, f = 100 MHz Output capacitance VCB = 10 V, IE = 0 mA, f = 1 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 10 V, f = 100 MHz, F 3 dB Cce 0.28 Ccb 0.7 Cob fT 800 1100 0.96 pF MHz
IC = 20 mA, VCE = 10 V, f = 35 MHz
2
Apr-15-2003
Output conductance
ZS = 50
g22e
-
60
-
S
BF799
Total power dissipation Ptot = f(TS)
320
mW
240
Ptot
200
160
120
80
40
0 0
15
30
45
60
75
90 105 120
°C 150 TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load
Ptotmax/PtotDC = f (tp )
10 3 10 3
Ptotmax / PtotDC
K/W
-
RthJS
10 2
10 2
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s tp
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
3
Apr-15-2003
BF799
Transition frequency fT = f (IC)
f = 100MHz
BF 799 EHT07116
Collector-base capacitance Ccb = f (VCB )
f = 1 MHz
BF 799 EHT07117
1200 fT MHz 1000
1.5 Ccb pF
VCE = 5 V 800
1.0
600
2V
400
0.5
200
0
0
10
20
30
40 mA 50
0
0
10
V VCB
20
C
4
Apr-15-2003
Others parts begin by bf
BF-1 BF-2 BF-3 BF-4 BF-5 BF-6 BF-7 BF-8
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