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Part: BFP193WE6327
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: NPN Silicon RF Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BFP193WE6327 datasheet File size : 104 kB
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Datasheet text preview:
BFP193W
NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz
3 4
Junction temperature Ambient temperature Storage temperature Thermal Resistance
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Junction - soldering point 2)
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP193W
Maximum Ratings Parameter
Marking RCs 1=E
Pin Configuration 2=C 3=E 4=B
Package SOT343
Unit V
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 80 10 580 150 -65 ... 150 -65 ... 150
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 66 °C 1)
mA mW °C
RthJS
145
K/W
Aug-09-2001
BFP193W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Aug-09-2001
BFP193W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
1G ma
Symbol min. fT Ccb Cce Ceb F Gma |S21e|2 6 -
Values typ. 8 0.63 0.33 1.8 max. 0.9 -
Unit
GHz pF
dB 1.3 2.1 -
19.5 13
-
15 9
-
= |S21 / S12 | (k-(k2-1)1/2)
3
Aug-09-2001
BFP193W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.2738 24 1.935 3.8742 0.94371 1 1.1824 18.828 0.96893 1.1828 1.0037 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 125 0.26949 14.267 0.037925 1.8368 0.76534 0.70276 0.69477 0 0.30002 0 0 0.72063 A A
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
0.95341 10.627 1.4289 0.037409 0.91763 0.11938 0.48654 0.8 935.03 0.053563 0.75 1.11 300
fA fA mA -
fF ps
V deg fF -
V fF V eV K
mA V ns -
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.43 0.47 0.26 0.12 0.06 0.36 68 46 232 nH nH nH nH nH nH fF fF fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
4
Aug-09-2001
BFP193W
Total power dissipation Ptot = f (TS )
600 mW 500 450
P tot
400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 °C 150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load
Ptotmax/P totDC = f (tp)
10 3 10 2
K/W
Ptotmax / PtotDC
-
10 2
10 1
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 0 -7 10
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Aug-09-2001
Others parts begin by bf
BF-1 BF-2 BF-3 BF-4 BF-5 BF-6 BF-7 BF-8
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