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Part: BFP194E6327
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: PNP Silicon RF Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BFP194E6327 datasheet File size : 104 kB
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Datasheet text preview:
BFP 194
PNP Silicon RF Transistor For low distortion broadband amplifier in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA
3 4 2 1
VPS05178
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point RthJS
1) TS is measured on the collector lead at the soldering point to the pcb
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP 194
Maximum Ratings Parameter
Marking RKs 1=C
Pin Configuration 2=E 3=B 4=E
Package SOT-143
Symbol VCEO VCES VCBO VEBO IC IB 77 °C 1) Ptot Tj TA Tstg
Value 15 20 20 3 100 10 700 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS
mA mW °C
105
K/W
1
Oct-12-1999
BFP 194
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V hFE 15 50 IEBO 1 ICBO 100 V(BR)CEO 15 typ. max.
Unit
V nA µA -
2
Oct-12-1999
BFP 194
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available F) IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 70 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz |S21e|2 9 3 12 7 Gma F 2.8 4.7 Ceb 4.4 Cce 0.3 Ccb 1.4 2 fT 3.5 5 typ. max.
Unit
GHz pF
dB
3
Oct-12-1999
BFP 194
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data
IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI =
4.574 9.1007 0.841 1.7871 1.6 4.1356 17.699 53.11 0.010453 0.71631 0.97481 0 3
fA V V fF ps mA V ns -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
111.78 0.84785 92.296 0.012843 0.75304 0.15908 0.84843 0.65766 0 0.40003 0 0 0.90755
A A
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
0.66503 21.629 0.43618 0.061674 0.10833 0.48212 0.10323 3585.6 0.063742 0.75 1.11 300
fA mA -
0.0078447 fA
V deg fF -
V fF V eV K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG
Package Equivalent Circuit:
L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE =
0.84 0.65 0.31 0.14 0.07 0.42 145 19 281
nH
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or salesoffice to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
4
Oct-12-1999
BFP 194
Total power dissipation Ptot = f (TA *, TS )
* Package mounted on epoxy
800
mW
600
TS
P tot
500
400
TA
300
200
100
0 0
20
40
60
80
100
120 °C
150
TA,TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax/P totDC = f (tp)
10 3
10 2
K/W
Ptotmax / PtotDC
-
10 2
10 1
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 0 -7 10
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Oct-12-1999
Others parts begin by bf
BF-1 BF-2 BF-3 BF-4 BF-5 BF-6 BF-7 BF-8
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