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Part: BFR182T

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> RF

Description: Rf-bipolar NPN Type Transistors With Transition Frequency of 8 GHZ

Company: Infineon Technologies Corporation

Datasheet: Download BFR182T datasheet     File size : 125 kB

Request For quote: Find where to buy BFR182T



Datasheet text preview:
BFR182T
NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz

3

Junction temperature Ambient temperature Storage temperature

Thermal Resistance Junction - soldering point 2) RthJS

1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA





2 1
VPS05996

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type BFR182T
Maximum Ratings Parameter

Marking RGs

1=B

Pin Configuration 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg

Package SC75
Value 12 20 20 2 35 4 250 150 mW °C mA Unit V

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 75°C 1)

-65 ... 150 -65 ... 150

300

K/W

1

Aug-09-2001

BFR182T

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit

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Aug-09-2001

BFR182T

Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
1G ms 2G ma

Unit max. 0.5 dB GHz pF

typ. 8 0.33 0.18 0.6

fT Ccb Cce Ceb F

6 -

Gms -

1.2 1.9 20

-

Gma

-

13

-

|S21e|2 16 10 -

= |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2)

3

Aug-09-2001

BFR182T

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 4.8499 21.742 0.91624 2.2595 0.5641 2.8263 8.8619 22.72 6.5523 1.0132 1.7541 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 84.113 0.14414 10.004 0.039478 3.4217 2.1858 1.0378 0.43147 0 0.31068 0 0 0.64175 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.56639 8.4254 0.54818 5.9438 0.071955 1.8159 0.40796 0.34608 490.25 0.19281 0.75 1.11 300 fA fA mA -

fF ps mA V ns

V deg fF -

V fF V eV K

-

All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST)

Package Equivalent Circuit:

L1 =
C4 C1 L2 B L3 C

0.762 0.706 0.382 62 84 180 7 40 48

L2 = L3 = C1
C'

B'

Transistor Chip E'

C2 C3 C4 = C5 = C6 =

C6

C2

L1

C3

C5

fF fF

E

EHA07524

Valid up to 6GHz

For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

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Aug-09-2001


nH nH nH fF fF fF





BFR182T

Total power dissipation Ptot = f (TS )

300

mW

P tot

200

150

100

50

0 0

20

40

60

80

100

120 °C

150

TS

Permissible Pulse Load RthJS = f (tp )

Permissible Pulse Load Ptotmax/P totDC = f (tp)

10 3

10 2

Ptotmax / PtotDC

RthJS

10 2

10 1

D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0

D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

10 1 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

s

10

0

10 0 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

s

10

0

tp

tp

5

Aug-09-2001




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