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Part: BFR193T

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> RF

Description: Rf-bipolar NPN Type Transistors With Transition Frequency of 8 GHZ

Company: Infineon Technologies Corporation

Datasheet: Download BFR193T datasheet     File size : 125 kB

Request For quote: Find where to buy BFR193T



Datasheet text preview:
BFR193T
NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz

3

Junction temperature Ambient temperature Storage temperature

Thermal Resistance Junction - soldering point 2) RthJS

1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA





2 1
VPS05996

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type BFR193T
Maximum Ratings Parameter

Marking RCs

1=B

Pin Configuration 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg

Package SC75
Value 12 20 20 2 80 10 280 150 mW °C mA Unit V

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 91 °C 1)

-65 ... 150 -65 ... 150

210

K/W

1

Aug-09-2001

BFR193T

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit

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Aug-09-2001

BFR193T

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
1G ma

Unit max. 1 dB GHz pF

typ. 7.5 0.68 0.24 1.8

fT Ccb Cce Ceb F

6 -

Gma |S21e|2 -

1.3 2.1

-

16.5 10.5

-

13.5 8

-

= |S21 / S12 | (k-(k2-1)1/2 )

3

Aug-09-2001

BFR193T

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data
IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI =

0.2738 24 1.935 3.8742 0.94371 1 1.1824 18.828 0.96893 1.1828 1.0037 0 3

fA V V -

BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =

125 0.26949 14.267 0.037925 1.8368 0.76534 0.70276 0.69477 0 0.30002 0 0 0.72063

A A

NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM

0.95341 10.627 1.4289 0.037409 0.91763 0.11938 0.48654 0.8 935.03 0.053563 0.75 1.1 300

fA fA mA -

fF ps

V deg fF -

V fF V eV K

mA V ns -

All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST)

Package Equivalent Circuit:

L BI =
C4 C1 L2 B L3 C

0.762 0.706 0.382 62 84 180 7 40 48

L BO = L EI = L EO = L CI = L CO =
C3 C5 C'

B'

Transistor Chip E'

C6

C2

C BE = C CB = C CE =

L1

fF fF

E

EHA07524

Valid up to 6GHz

For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

4

Aug-09-2001


nH nH nH fF fF fF





BFR193T

Total power dissipation Ptot = f (TS )

300

mW

P tot

200

150

100

50

0 0

20

40

60

80

100

120 °C

150

TS

Permissible Pulse Load RthJS = f (tp )

Permissible Pulse Load Ptotmax/P totDC = f (tp)

10 3

10 2

RthJS

10 2

Ptotmax / PtotDC

10 1

D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0

10 1

D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

10 0 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

s

10

0

10 0 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

s

10

0

tp

tp

5

Aug-09-2001




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