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Part: BFR193WE6327
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: NPN Silicon RF Transistor
Company: Infineon Technologies Corporation
Datasheet: Download BFR193WE6327 datasheet File size : 125 kB
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Datasheet text preview:
BFR193W
NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz
3
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point 2) RthJS
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
2 1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR193W
Maximum Ratings Parameter
Marking RCs 1=B
Pin Configuration 2=E
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SOT323
Value 12 20 20 2 80 10 580 150 -65 ... 150 -65 ... 150 mW °C mA Unit V
3=C
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 63 °C 1)
150
K/W
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Aug-09-2001
BFR193W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
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Aug-09-2001
BFR193W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
1G ma
Unit max. 1 dB GHz pF
typ. 8 0.74 0.28 1.8
fT Ccb Cce Ceb F
6 -
Gma |S21e|2 -
1.3 2.1
-
15.5 10
-
13.5 7.5
-
= |S21 / S12 | (k-(k2-1)1/2 )
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Aug-09-2001
BFR193W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.2738 24 1.935 3.8742 0.94371 1 1.1824 18.828 0.96893 1.1828 1.0037 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 125 0.26949 14.267 0.037925 1.8368 0.76534 0.70276 0.69477 0 0.30002 0 0 0.72063 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.95341 10.627 1.4289 0.037409 0.91763 0.11938 0.48654 0.8 935.03 0.053563 0.75 1.1 300 fA fA mA -
fF ps
V deg fF -
V fF V eV K
mA V ns -
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE =
0.57 0.4 0.43 0.5 0 0.41 61 101 175
fF fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
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Aug-09-2001
nH nH nH nH nH nH fF
BFR193W
Total power dissipation Ptot = f (TS )
600 mW 500 450
P tot
400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 °C 150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax/P totDC = f (tp)
10 3
10 2
K/W
Ptotmax / PtotDC
-
10 2
10 1
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 0 -7 10
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
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Aug-09-2001
Others parts begin by bf
BF-1 BF-2 BF-3 BF-4 BF-5 BF-6 BF-7 BF-8
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