Details, datasheet, quote on part number: HYM322160GS-60
CategoryMemory => DRAM => EDO/FPM DRAM => Modules => 8 MB => FPM
Description2M X 32bit DRAM Module
CompanyInfineon Technologies Corporation
DatasheetDownload HYM322160GS-60 datasheet
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Features, Applications

097 152 words by 32-Bit organization (alternative 194 304 words by 16-Bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single V 10 supply Low power dissipation max. 4840 mW active (-60 version) max. 4400 mW active (-70 version) CMOS 88 mW standby TTL 176 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 8 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin double-sided Single in-Line Memory Module with mm (1000 mil) height Utilizes sixteen 4 DRAMs in 300 mil SOJ packages 1024 refresh cycles 16 ms Optimized for use in byte-write non-parity applications Tin-Lead contact pads (S- version) Gold contact pads (GS - version)

The a 8 MByte DRAM module organized 097 152 words a 72-pin single-in-line package comprising sixteen 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 F ceramic decoupling capacitors a PC board. The HYM322160S/GS-60/-70 can also be used 194 304 words by 16-Bits dynamic RAM module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18,..., DQ15 and DQ31, respectively. Each HYB514400BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 322160S/GS-60/-70 dictates the use of early write cycles. Ordering Information Type HYM 322160S-60 HYM 322160S-70 HYM 322160GS-60 HYM 322160GS-70 Ordering Code Q67100-Q2016 Q67100-Q2017 Package L-SIM-72-11 Description DRAM Module (access time 60 ns) DRAM Module (access time 70 ns) DRAM Module (access time 60 ns) DRAM Module (access time 70 ns)

VSS DQ19 9 VCC 10 N.C. A6 18 N.C. A7 28 N.C. 29 VCC RAS2 34 N.C. 35 N.C. 36 N.C. 37 VSS DQ12 57 VCC PD2 69 N.C. 71 N.C. RAS0 44 N.C. 46 N.C. DQ31 64 N.C. PD3 70 VSS 72

Address Inputs Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power 5 V) Ground Presence Detect Pin No Connection


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