Details, datasheet, quote on part number: HYM324025GS-70
PartHYM324025GS-70
Category
Description4M X 32 Bit DRAM Module
CompanyInfineon Technologies Corporation
DatasheetDownload HYM324025GS-70 datasheet
  

 

Features, Applications

194 304 words by 32-bit organized SIMM modules for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper page mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single V 10 supply Low power dissipation max. 5280 mW active (HYM 324025S/GS-50) max. 4840 mW active (HYM 324025S/GS-60) CMOS 44 mW standby TTL 88 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 8 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module with mm (900 mil) height Utilizes eight in 300mil wide SOJ packages 2048 refresh cycles 32 ms Optimized for use in byte-write non-parity applications Tin-Lead contact pads (S - version) Gold contact pads (GS - version)

The HYM a 16 MByte DRAM module organized 194 304 words a 72-pin single-in-line package comprising eight HYB x 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 F ceramic decoupling capacitors a PC board. Each HYB 5117405BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 324025S/GS-50/-60 dictates the use of early write cycles. Ordering Information Type HYM 324025S-50 HYM 324025S-60 HYM 324025GS-50 HYM 324025GS-60 Ordering Code Q67100-Q2157 Q67100-Q2096 Package L-SIM-72-12 Description EDO - DRAM Module (access time 50 ns) EDO - DRAM Module (access time 60 ns) EDO - DRAM Module (access time 50 ns) EDO - DRAM Module (access time 60 ns)

VSS DQ18 DQ19 N.C. DQ22 DQ23 N.C. A8 N.C. VSS CAS2 CAS1 N.C. DQ11 DQ12 VCC PD0 PD2 N.C. 8 9 VCC 28 29 VCC 34 35 N.C. RAS0 44 N.C. 46 N.C. DQ31 64 N.C. PD3 70 VSS 72

Address Inputs for HYM 324025S/GS Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power 5 V) Ground Presence Detect Pin No Connection


 

Some Part number from the same manufacture Infineon Technologies Corporation
HYM324025S DRAM Module: 4mx32
HYM324025S-50 4M X 32bit Edo-module
HYM324025S-60
HYM324025SC-60 8M X 32 Bit Edo DRAM Module
HYM328000GD 8mx32 Small Outline DRAM Module
HYM328000GD-50 8M X 32bit DRAM Module Small Outline Memory Module
HYM328020GD-50
HYM328020GS DRAM: 8mx32
HYM328020GS-50 8M X 32bit DRAM Module
HYM328020GS-60 8M X 32 Bit Edo DRAM Module
HYM328020S DRAM: 8mx32
HYM328020S-50 8M X 32bit DRAM Module
HYM328020S-60 8M X 32 Bit Edo DRAM Module
HYM328025GS Edo-dram: 8mx32
HYM328025GS-50 8M X 32bit Edo-module
HYM328025S Edo-dram: 8mx32
HYM328025S-50 8M X 32bit Edo-module
HYM328025S-60
HYM361120GS 1mx36/2mx18 DRAM Module
HYM361120GS-60 1M X 36bit DRAM Module
HYM361120GS-70

BA892 : Silicon RF Switching Diode

HYM641010GS : FPM 1mx64 DRAM Module

IL388 : High Performance Linear Optocoupler For Optical Daa in Telecommunications

SAB-C505L-4EM : 8-bit Microcontroller With On-chip LCD

HYB25S512160TC-3 : Memory Spectrum

HYB25D256160TTL-5 : Memory Spectrum

PBL38630/2QNT : Interface - Telecom Integrated Circuit (ics) 2.8mA 5V; IC LINE INTERFACE SLIC PLCC-28 Specifications: Interface: - ; Number of Circuits: 1 ; Current - Supply: 2.8mA ; Voltage - Supply: 5V ; Operating Temperature: -40C ~ 85C ; Power (Watts): 730mW ; Lead Free Status: Contains Lead ; RoHS Status: RoHS Non-Compliant

IPP21N03L G : Fet - Single Discrete Semiconductor Product - - - Through Hole; MOSFET N-CH TO-220 Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): - ; Current - Continuous Drain (Id) @ 25 C: - ; Rds On (Max) @ Id, Vgs: - ; Input Capacitance (Ciss) @ Vds: - ; Power - Max: - ; Packaging: Tube ; Gate Charge (Qg) @ Vgs: - ; Pack

 
0-C     D-L     M-R     S-Z