Details, datasheet, quote on part number: HYM324025S-60
PartHYM324025S-60
Category
Description4M X 32bit Edo-module
CompanyInfineon Technologies Corporation
 
Quote
Find where to buy
 
  
Some Part number from the same manufacture Infineon Technologies Corporation
HYM324025SC-60 8M X 32 Bit Edo DRAM Module
HYM328000GD 8mx32 Small Outline DRAM Module
HYM328000GD-50 8M X 32bit DRAM Module Small Outline Memory Module
HYM328020GD-50
HYM328020GS DRAM: 8mx32
HYM328020GS-50 8M X 32bit DRAM Module
HYM328020GS-60 8M X 32 Bit Edo DRAM Module
HYM328020S DRAM: 8mx32
HYM328020S-50 8M X 32bit DRAM Module
HYM328020S-60 8M X 32 Bit Edo DRAM Module
HYM328025GS Edo-dram: 8mx32
HYM328025GS-50 8M X 32bit Edo-module
HYM328025S Edo-dram: 8mx32
HYM328025S-50 8M X 32bit Edo-module
HYM328025S-60
HYM361120GS 1mx36/2mx18 DRAM Module
HYM361120GS-60 1M X 36bit DRAM Module
HYM361120GS-70
HYM361120S 1mx36/2mx18 DRAM Module
HYM361120S-60 1M X 36bit DRAM Module
HYM361120S-70

BCX51-16 : PNP Silicon af Transistor

BSO604NS2 : E.g. OptiMOS®

PSB4596-S : Alis-a (Analog Line Interface Solutio...

HYS72T64000HFN-3.7-A : 240PIN fully Buffered DDR2 SDRAM Modules 512MB, 64Mx72, PC2-4200 4-4-4, 1 rank, available 1Q06

HYB18S256160TC-7F : Memory Spectrum

HYB18D128160TTL-7 : Memory Spectrum

SLD9630 : Infineon Technologies Trusted Platform Module Solution

IPP120N04S3-02 : MOSFET OPTIMOS-T PWR-TRANS N-CH 40V 120A Specifications: Manufacturer: Infineon ; Product Category: MOSFET ; RoHS:  Details ; Transistor Polarity: N-Channel ; Drain-Source Breakdown Voltage: 40 V ; Gate-Source Breakdown Voltage: +/- 20 V ; Continuous Drain Current: 120 A ; Resistance Drain-Source RDS (on): 2.3 m Ohms ; Configuration:

IPB65R280C6 : Fet - Single Discrete Semiconductor Product 13.8A 700V 104W Surface Mount; MOSFET N-CH 700V 13.8A TO263 Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 700V ; Current - Continuous Drain (Id) @ 25 C: 13.8A ; Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V ; Input Capacitance (Ciss) @ Vds: 950pF @ 100V ; Power - Max: 104W ; Packaging

FP100R12KT4_B11 : 1200 V, N-CHANNEL IGBT Specifications: Polarity: N-Channel ; Package Type: MODULE-35 ; Number of units in IC: 7

SAK-XC164SM-8F20F : 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP144 Specifications: Data Bus: 16 Bit ; Life Cycle Stage: ACTIVE ; Clock Speed: 20 MHz ; ROM Type: Flash ; Supply Voltage: 2.35 to 2.7 volts ; I/O Ports: 99 ; Package Type: TQFP, Other, 0.50 MM PITCH, GREEN, PLASTIC, TQFP-144 ; Operating Range: Auto ; Pin Count: 144 ; Operating Temperature: -40 to 125 C

 
0-C     D-L     M-R     S-Z