Details, datasheet, quote on part number: HYM72V1645GU-50
PartHYM72V1645GU-50
Category
Description16M X 64bit DRAM Module
CompanyInfineon Technologies Corporation
 
  
Some Part number from the same manufacture Infineon Technologies Corporation
HYM72V1645GU-60 16M X 64bit DRAM Module
HYM72V2005GS Edo-dram Module: 2mx72
HYM72V2005GS-50 2M X 64 Bit DRAM Module Buffered
HYM72V2005GU 3.3v Edo-dram Module: 2mx72
HYM72V2005GU-50 2M X 64bit DRAM Module
HYM72V4000GS DRAM Module: 4mx72
HYM72V4000GS-50 4M X 72bit DRAM Module
HYM72V4000GS-60
HYM72V4005GS 4mx72 Edo-dram Module (ecc-module) 168 Pin Buffered Dimm Module
HYM72V4005GS-50 4M X 72bit Edo-dram Module
HYM72V4005GS-60
HYM72V4005GU 3.3v Edo-dram Module: 4mx72
HYM72V4005GU-50 4M X 64bit DRAM Module
HYM72V4010GS DRAM Module: 4mx72
HYM72V4010GS-50 4M X 72bit DRAM Module
HYM72V4010GS-60
HYM72V4015GS 4mx72 Edo-dram Module (ecc-module) 168 Pin Buffered Dimm Module
HYM72V4015GS-50 4M X 72bit Edo-dram Module
HYM72V4015GS-60
HYM72V4045GU 3.3v Edo-dram Module: 4mx72
HYM72V4045GU-50 4M X 72bit DRAM Module

BAS28W : Silicon Switching Diode Array

LO3360 : 3 MM (t1) Led, Diffused

SAK-TC1775-L40E : 32-bit Microcontroller For High Demanding Automotive And Industrial Applications (e.g. Engine Management, Starter Generator, 3-phase Motor Control or Robotics)

SAF-XC888-8FFA : XC886/888CLM The XC886/888CLM enhances the XC800 family of 8-bit µCs with a new member providing advanced networking capabilities by integrating both a CAN controller (V2.0B active) and LIN support on a single chip.

Q67007-A9336 : Dual Low Drop Voltage Regulator

HYB39D1G160TGL-3 : Memory Spectrum

HYB39D256160TT-37 : Memory Spectrum

IPG20N04S4-09 : MOSFET N-Channel 40V MOSFET Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFET

IPP80N06S2L-H5 : Fet - Single Discrete Semiconductor Product 80A 55V 250W Through Hole; MOSFET N-CH 55V 80A TO220-3 Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 55V ; Current - Continuous Drain (Id) @ 25° C: 80A ; Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 69A, 10V ; Input Capacitance (Ciss) @ Vds: 3800pF @ 25V ; Power - Max: 250W ; Packaging: Tub

BB 659C H7912 : Variable Capacitance Diode (varicaps, Varactors) Discrete Semiconductor Product 30V Single; DIODE VAR CAP 30V 20MA SCD80 Specifications: Package / Case: SC-80 ; Packaging: Tape & Reel (TR) ; Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz ; Q @ Vr, F: - ; Capacitance Ratio: 15.3 ; Voltage - Peak Reverse (Max): 30V ; Diode Type: Single ; Mounting Type: Surface Mount ; Capacitance Ratio Condition: C1/C28 ; Lead Free Status:

BBY55-02VE6433 : 18.6 pF, 16 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE

SAK-XC866-4RRA3V : 8-BIT, FLASH, 25.6 MHz, MICROCONTROLLER, PDSO16 Specifications: Life Cycle Stage: ACTIVE ; Clock Speed: 48 MHz ; ROM Type: Flash ; Supply Voltage: 3 to 5.5 volts ; I/O Ports: 13 ; Package Type: TSSOP, Other, GREEN, PLASTIC, TSSOP-16 ; Operating Range: Auto ; Pin Count: 16 ; Operating Temperature: -40 to 125 C (-40 to 257 F) ; Features: PWM

 
0-C     D-L     M-R     S-Z